JANTX2N6784

更新时间： 2024-11-03 22:57:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲
页数	文件大小	规格书
6页	203K
描述
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=1.5ohm, Id=2.25A)

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JANTX2N6784 数据手册

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Provisional Data Sheet No. PD-9.424B

JANTX2N6784

JANTXV2N6784

[REF:MIL-PRF-19500/556]

HEXFET^®POWER MOSFET

[GENERIC:IRFF210]

N-CHANNEL

200 Volt, 1.5Ω HEXFET

Product Summary

Part Number

JANTX2N6784

JANTXV2N6784

BVDSS

RDS(on)

HEXFET technology is the key to International

Rectifier’s advanced line of power MOSFET transis-

tors. The efficient geometry achieves very low on-

state resistance combined with high transconductance.

2.25A

200V

1.5Ω

HEXFET transistors also feature all of the well-es-

tablish advantages of MOSFETs, such as voltage

control, very fast switching, ease of paralleling and

electrical parameter temperature stability. They are

well-suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio

amplifiers, and high energy pulse circuits, and virtu-

ally any application where high reliability is required.

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

Absolute Maximum Ratings

Parameter

JANTX2N6784, JANTXV2N6784 Units

@ V

= 10V, T = 25°C Continuous Drain Current

2.25

@ V

= 10V, T = 100°C Continuous Drain Current

1.50

9.0

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt ➂

Operating Junction

@ T = 25°C

W/K ➄

0.12

±20

dv/dt

5.0

V/ns

-55 to 150

STG

StorageTemperature Range

Lead Temperature

(0.063 in. (1.6mm) from

300

^oC

case for 10.5 seconds)

0.98 (typical)

Weight

To Order

12 3 4 5 6

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JANTX2N6784 替代型号

型号	品牌	替代类型	描述	数据表
IRFF210	INFINEON	功能相似	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖T

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JANTX2N6784U	INFINEON	获取价格	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R
JANTX2N6786	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A)
JANTX2N6786	MICROSEMI	获取价格	Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Me
JANTX2N6786U	INFINEON	获取价格	HEXFET TRANSISTOR
JANTX2N6786U	MICROSEMI	获取价格	暂无描述
JANTX2N6788	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A)
JANTX2N6788E3	MICROSEMI	获取价格	Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal
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JANTX2N6790	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.80ohm, Id=3.5A)
JANTX2N6790U	ETC	获取价格	200V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package