5秒后页面跳转
IRFF210 PDF预览

IRFF210

更新时间: 2024-09-29 22:31:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管局域网
页数 文件大小 规格书
7页 133K
描述
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)

IRFF210 技术参数

是否Rohs认证:不符合生命周期:Active
包装说明:CYLINDRICAL, O-MBCY-W3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.07
Is Samacsys:N其他特性:HIGH RELIABILITY
雪崩能效等级(Eas):48 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):2.25 A最大漏极电流 (ID):2.25 A
最大漏源导通电阻:1.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-205AFJESD-30 代码:O-MBCY-W3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:METAL封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):15 W
最大脉冲漏极电流 (IDM):9 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大关闭时间(toff):50 ns最大开启时间(吨):35 ns
Base Number Matches:1

IRFF210 数据手册

 浏览型号IRFF210的Datasheet PDF文件第2页浏览型号IRFF210的Datasheet PDF文件第3页浏览型号IRFF210的Datasheet PDF文件第4页浏览型号IRFF210的Datasheet PDF文件第5页浏览型号IRFF210的Datasheet PDF文件第6页浏览型号IRFF210的Datasheet PDF文件第7页 
PD - 90424C  
IRFF210  
JANTX2N6784  
JANTXV2N6784  
REPETITIVEAVALANCHEANDdv/dtRATED  
HEXFET TRANSISTORS  
THRU-HOLE (TO-205AF)  
REF:MIL-PRF-19500/556  
200V, N-CHANNEL  
Product Summary  
Part Number BVDSS RDS(on)  
IRFF210 200V 1.5Ω  
ID  
2.25A  
The HEXFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors.  
The efficient geometry and unique processing of this latest  
“State of the Art” design achieves: very low on-state resis-  
tance combined with high transconductance.  
TO-39  
The HEXFET transistors also feature all of the well  
established advantages of MOSFETs such as volt-  
age control, very fast switching, ease of parelleling  
and temperature stability of the electrical parameters.  
Features:  
n
n
n
n
n
Repetitive Avalanche Ratings  
Dynamic dv/dt Rating  
Hermetically Sealed  
Simple Drive Requirements  
Ease of Paralleling  
They are well suited for applications such as switch-  
ing power supplies, motor controls, inverters, chop-  
pers, audio amplifiers and high energy pulse circuits.  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
2.25  
1.50  
9.0  
D
GS  
C
A
I
D
= 10V, T = 100°C Continuous Drain Current  
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
15  
W
W/°C  
V
D
C
0.12  
±20  
V
GS  
Gate-to-Source Voltage  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
48  
mJ  
AS  
I
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
mJ  
AR  
dv/dt  
5.0  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Lead Temperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10s)  
0.98(typical)  
For footnotes refer to the last page  
www.irf.com  
1
01/22/01  

IRFF210 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N6784 INFINEON

完全替代

POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=1.5ohm, Id=2.25A)
2N6784 MICROSEMI

功能相似

N-CHANNEL MOSFET
2N6784 FAIRCHILD

功能相似

2.25A, 200V, 1.500 Ohm, N-Channel Power MOSFET

与IRFF210相关器件

型号 品牌 获取价格 描述 数据表
IRFF210R ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2.2A I(D) | TO-205AF
IRFF211 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFF211R ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.2A I(D) | TO-205AF
IRFF212 NJSEMI

获取价格

Trans MOSFET N-CH 200V 7.5A 3-Pin TO-39
IRFF212R NJSEMI

获取价格

Trans MOSFET N-CH 200V 7.5A 3-Pin TO-39
IRFF213 VISHAY

获取价格

Power Field-Effect Transistor, 1.8A I(D), 150V, 2.4ohm, 1-Element, N-Channel, Silicon, Met
IRFF213 NJSEMI

获取价格

Trans MOSFET N-CH 150V 7.5A 3-Pin TO-39
IRFF213R ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 1.8A I(D) | TO-205AF
IRFF220 SEME-LAB

获取价格

N–CHANNEL POWER MOSFET
IRFF220 INTERSIL

获取价格

3.5A, 200V, 0.800 Ohm, N-Channel Power MOSFET