Datasheet > IRFF220

IRFF220

更新时间： 2023-12-06 20:02:50

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
7页	915K
描述
200V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A IRFF220 with Hermetic Packaging

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中文翻译

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数据手册
替代型号

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IRFF220 数据手册

PD-90427E

IRFF220

JANTX2N6790

JANTXV2N6790

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTORS

200V, N-CHANNEL

REF: MIL-PRF-19500/555

THRU-HOLE TO-205AF (TO-39)

Product Summary

Part Number

BVDSS

RDS(on)

I_D

IRFF220

200V

3.5A

0.80

TO-39

Description

Features

The HEXFET^®technology is the key to International

Rectifier’s HiRel advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on state

resistance combined with high trans conductance.

 Repetitive Avalanche Ratings

 Dynamic dv/dt Rating

 Hermetically Sealed

 Simple Drive Requirements

 ESD Rating: Class 1B per MIL-STD-750,

Method 1020

The HEXFET transistors also feature all of the well

established advantages of MOSFETs such as voltage

control, very fast switching and temperature stability of the

electrical parameters.

They are well suited for applications such as switching power

supplies, motor controls, inverters, choppers, audio amplifiers

and high energy pulse circuits.

Absolute Maximum Ratings

Symbol

Value

Parameter

Units

I_D1@ V_GS= 10V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 10V, T_C= 100°C Continuous Drain Current

3.5

2.25

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

0.16

± 20

0.242

V_GS

E_AS

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

I_AR

E_AR

Avalanche Current 

2.2

2.0

5.0

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

dv/dt

T_J

Operating Junction and

Storage Temperature Range

Lead Temperature

Weight

-55 to + 150

T_STG

°C

300 (0.063 in. /1.6 mm from case for 10s)

0.98 (Typical)

For Footnotes, refer to the page 2.

2018-12-05

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7

中文翻译

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IRFF220 替代型号

型号	品牌	替代类型	描述	数据表
JANTXV2N6790	INFINEON	完全替代	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.80ohm, Id=3.5A)
JANTX2N6790	INFINEON	完全替代	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.80ohm, Id=3.5A)

与IRFF220相关器件

型号	品牌	获取价格	描述	数据表
IRFF220-2	VISHAY	获取价格	TRANSISTOR 3.5 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205, FET General Purpos
IRFF220R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 3.5A I(D) \| TO-205AF
IRFF221	RENESAS	获取价格	3.5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRFF221	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFF221R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 3.5A I(D) \| TO-205AF
IRFF222	VISHAY	获取价格	Power Field-Effect Transistor, 3A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal
IRFF222	RENESAS	获取价格	3A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
IRFF222R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 3A I(D) \| TO-205AF
IRFF223	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 3A I(D) \| TO-39
IRFF223R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 3A I(D) \| TO-205AF

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