是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | HERMETIC SEALED, LCC-18 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.17 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 20 mJ |
外壳连接: | SOURCE | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 2.25 A |
最大漏极电流 (ID): | 2.25 A | 最大漏源导通电阻: | 1.725 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CQCC-N15 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 15 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 15 W | 最大脉冲漏极电流 (IDM): | 9 A |
认证状态: | Qualified | 参考标准: | MIL-19500/556 |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N6786 | INFINEON |
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POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A) | |
JANTX2N6786 | MICROSEMI |
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Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Me | |
JANTX2N6786U | INFINEON |
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HEXFET TRANSISTOR | |
JANTX2N6786U | MICROSEMI |
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暂无描述 | |
JANTX2N6788 | INFINEON |
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POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A) | |
JANTX2N6788E3 | MICROSEMI |
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Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal | |
JANTX2N6788U | INFINEON |
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HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | |
JANTX2N6790 | INFINEON |
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POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.80ohm, Id=3.5A) | |
JANTX2N6790U | ETC |
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200V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package | |
JANTX2N6792 | INFINEON |
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POWER MOSFET N-CHANNEL(BVss=400V, Rds(on)=1.8ohm, Id=2.0A) |