型号 | 品牌 | 替代类型 | 描述 | 数据表 |
JAN2N6770T1 | MICROSEMI |
完全替代 |
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
2N6770T1 | MICROSEMI |
完全替代 |
N-CHANNEL MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N6782 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.60ohm, Id=3.5A) | |
JANTX2N6782PBF | INFINEON |
获取价格 |
暂无描述 | |
JANTX2N6782TR | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Met | |
JANTX2N6782U | INFINEON |
获取价格 |
HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | |
JANTX2N6784 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=1.5ohm, Id=2.25A) | |
JANTX2N6784U | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R | |
JANTX2N6786 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A) | |
JANTX2N6786 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Me | |
JANTX2N6786U | INFINEON |
获取价格 |
HEXFET TRANSISTOR | |
JANTX2N6786U | MICROSEMI |
获取价格 |
暂无描述 |