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JANTX2N6764 PDF预览

JANTX2N6764

更新时间: 2024-11-03 22:57:27
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
6页 209K
描述
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.055ohm, Id=38A)

JANTX2N6764 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:TO-204, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.17
Is Samacsys:N其他特性:HIGH RELIABILITY
雪崩能效等级(Eas):150 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):38 A最大漏极电流 (ID):38 A
最大漏源导通电阻:0.065 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-204JESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):152 A
认证状态:Qualified参考标准:MIL-19500/543
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:PIN/PEG
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JANTX2N6764 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.337E  
JANTX2N6764  
JANTXV2N6764  
HEXFET® POWER MOSFET  
[REF:MIL-PRF-19500/543]  
[GENERIC:IRF150]  
N-CHANNEL  
100 Volt, 0.055HEXFET  
Product Summary  
Part Number  
JANTX2N6764  
JANTXV2N6764  
BVDSS  
RDS(on)  
ID  
HEXFETtechnology is the key to International Rectifier’s  
advanced line of power MOSFET transistors.The effi-  
cient geometry achieves very low on-state resistance  
combined with high transconductance.  
100V  
38A  
0.055Ω  
HEXFET transistors also feature all of the well-establish  
advantages of MOSFETs, such as voltage control, very  
fast switching, ease of paralleling and electrical param-  
eter temperature stability. They are well-suited for appli-  
cations such as switching power supplies, motor  
controls, inverters, choppers, audio amplifiers, and high  
energy pulse circuits, and virtually any application where  
high reliability is required.  
Features:  
Avalanche Energy Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Absolute Maximum Ratings  
Parameter  
JANTX2N6764, JANTXV2N6764 Units  
I
@ V  
= 10V, T = 25°C Continuous Drain Current  
38  
D
GS  
C
A
I
D
@ V  
= 10V, T = 100°C Continuous Drain Current  
24  
152  
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
150  
W
W/K ➄  
V
D
C
1.2  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
±20  
GS  
E
150  
mJ  
AS  
I
38  
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
15  
mJ  
AR  
dv/dt  
5.5  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
Lead Temperature  
STG  
(0.063 in. (1.6mm) from  
case for 10 seconds)  
11.5 (typical)  
300  
Weight  
To Order  
 
 

JANTX2N6764 替代型号

型号 品牌 替代类型 描述 数据表
IRF150 INFINEON

完全替代

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A)

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