生命周期: | Active | 零件包装代码: | LCC |
包装说明: | CHIP CARRIER, R-CQCC-N15 | 针数: | 18 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.19 | Is Samacsys: | N |
雪崩能效等级(Eas): | 7 mJ | 外壳连接: | SOURCE |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 3.5 A | 最大漏源导通电阻: | 0.69 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CQCC-N15 |
元件数量: | 1 | 端子数量: | 15 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 14 A | 认证状态: | Qualified |
参考标准: | MIL-19500/556 | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | QUAD |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRFF110 | INFINEON |
类似代替 |
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A IRFF110 with Hermetic Packag | |
2N6782 | INFINEON |
类似代替 |
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A 2N6782 with Hermetic Packagi |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
JANTX2N6782PBF | INFINEON |
获取价格 |
暂无描述 | |
JANTX2N6782TR | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Met | |
JANTX2N6782U | INFINEON |
获取价格 |
HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) | |
JANTX2N6784 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=1.5ohm, Id=2.25A) | |
JANTX2N6784U | INFINEON |
获取价格 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R | |
JANTX2N6786 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=3.6ohm, Id=1.25A) | |
JANTX2N6786 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Me | |
JANTX2N6786U | INFINEON |
获取价格 |
HEXFET TRANSISTOR | |
JANTX2N6786U | MICROSEMI |
获取价格 |
暂无描述 | |
JANTX2N6788 | INFINEON |
获取价格 |
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.30ohm, Id=6.0A) |