Datasheet > IRFF110

IRFF110

更新时间： 2023-12-20 18:44:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	713K
描述
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package - A IRFF110 with Hermetic Packaging

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IRFF110 数据手册

IRFF110

PD-90423E

Repetitive Avalanche and dv/dt Rated Power MOSFET

Thru-Hole (TO-205AF / TO-39)

100V, 3.5A, N-channel

Features

Product Summary



Repetitive avalanche ratings



BV_DSS: 100V

I_D: 3.5A

R_DS(on),max: 0.6

Q_{G, max}: 8.1nC

Dynamic dv/dt rating

Hermetically sealed

Simple drive requirements

ESD rating: Class 1A per MIL-STD-750, Method 1020

Potential Applications



DC-DC converter

Motor drives



TO-205AF / TO-39

Product Validation

Qualified according to MIL-PRF-19500 for space applications

Description

HEXFET POWER MOSFET technology is the key to IR HiRel’s advanced line of power MOSFET transistors. The

efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state

resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well-established advantages of MOSFETs such as voltage control,

very fast switching and temperature stability of the electrical parameters. They are well suited for applications

such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse

circuits.

Ordering Information

Table 1

Ordering options

Part number

IRFF110

Package

Screening Level

COTS

TO-205AF / TO-39

2N6782

COTS

JANTX2N6782

JANTX

JANTXV2N6782

JANTXV

Please read the Important Notice and Warnings at the end of this document

page 1 of 12

www.infineon.com/irhirel

2023-01-16

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