JANTX2N6766

更新时间： 2024-11-23 22:57:27

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描述
POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=0.085ohm, Id=30A)

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JANTX2N6766 数据手册

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Provisional Data Sheet No. PD-9.338D

JANTX2N6766

JANTXV2N6766

[REF:MIL-PRF-19500/543]

HEXFET^®POWER MOSFET

[GENERIC:IRF250]

N-CHANNEL

Product Summary

200 Volt, 0.085Ω HEXFET

Part Number

JANTX2N6766

JANTXV2N6766

BVDSS

RDS(on)

HEXFETtechnology is the key to International Rectifier’s

advanced line of power MOSFET transistors.The effi-

cient geometry achieves very low on-state resistance

combined with high transconductance.

200V

30A

0.085Ω

HEXFET transistors also feature all of the well-establish

advantages of MOSFETs, such as voltage control, very

fast switching, ease of paralleling and electrical param-

eter temperature stability. They are well-suited for appli-

cations such as switching power supplies, motor controls,

inverters, choppers, audio amplifiers, and high energy

pulse circuits, and virtually any application where high

reliability is required.

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

Absolute Maximum Ratings

Parameter

JANTX2N6766, JANTXV2N6766 Units

@ V

= 10V, T = 25°C Continuous Drain Current

@ V

= 10V, T = 100°C Continuous Drain Current

120

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single PulseAvalanche Energy ➁

Avalanche Current➀

@ T = 25°C

150

W/K ➄

1.2

±20

500

RepetitiveAvalanche Energy➀

Peak Diode Recovery dv/dt ➂

Operating Junction

dv/dt

5.0

V/ns

-55 to 150

^oC

STG

StorageTemperature Range

Lead Temperature

(0.063 in. (1.6mm) from

300

case for 10.5 seconds)

11.5 (typical)

Weight

To Order

12 3 4 5 6

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JANTX2N6782	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.60ohm, Id=3.5A)
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JANTX2N6784	INFINEON	获取价格	POWER MOSFET N-CHANNEL(BVdss=200V, Rds(on)=1.5ohm, Id=2.25A)