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IRF150 PDF预览

IRF150

更新时间: 2024-11-19 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 153K
描述
TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.055ohm, Id= 38A)

IRF150 技术参数

是否Rohs认证: 不符合生命周期:Active
包装说明:TO-3, 2 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.62
雪崩能效等级(Eas):150 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):38 A最大漏源导通电阻:0.065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-204AE
JESD-30 代码:O-MBFM-P2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:METAL
封装形状:ROUND封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):152 A认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF150 数据手册

 浏览型号IRF150的Datasheet PDF文件第2页浏览型号IRF150的Datasheet PDF文件第3页浏览型号IRF150的Datasheet PDF文件第4页浏览型号IRF150的Datasheet PDF文件第5页浏览型号IRF150的Datasheet PDF文件第6页浏览型号IRF150的Datasheet PDF文件第7页 
PD - 90337G  
REPETITIVEAVALANCHEANDdv/dtRATED  
HEXFET TRANSISTORS  
THRU-HOLE (TO-204AA/AE)  
IRF150  
JANTX2N6764  
JANTXV2N6764  
[REF:MIL-PRF-19500/543]  
100V, N-CHANNEL  
Product Summary  
Part Number BVDSS  
RDS(on)  
ID  
IRF150  
100V  
0.05538A  
The HEXFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transistors.  
The efficient geometry and unique processing of this latest  
“State of the Art” design achieves: very low on-state resis-  
tance combined with high transconductance; superior re-  
verse energy and diode recovery dv/dt capability.  
TO-3  
The HEXFET transistors also feature all of the well estab-  
lished advantages of MOSFETs such as voltage control,  
very fast switching, ease of paralleling and temperature  
stability of the electrical parameters.  
Features:  
n Repetitive Avalanche Ratings  
n Dynamic dv/dt Rating  
n Hermetically Sealed  
n Simple Drive Requirements  
n EaseofParalleling  
They are well suited for applications such as switching  
power supplies, motor controls, inverters, choppers, audio  
amplifiers and high energy pulse circuits.  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 10V, T = 25°C  
Continuous Drain Current  
38  
D
GS  
C
A
I
D
= 10V, T = 100°C Continuous Drain Current  
24  
152  
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
150  
W
W/°C  
V
D
C
1.2  
V
GS  
Gate-to-SourceVoltage  
±20  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
150  
mJ  
AS  
I
38  
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
15  
mJ  
AR  
dv/dt  
5.5  
V/ns  
T
-55 to 150  
J
T
STG  
StorageTemperature Range  
oC  
g
LeadTemperature  
Weight  
300 (0.063 in. (1.6mm) from case for 10s)  
11.5 (typical)  
For footnotes refer to the last page  
www.irf.com  
1
08/21/01  

IRF150 替代型号

型号 品牌 替代类型 描述 数据表
JANTX2N6764 INFINEON

完全替代

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.055ohm, Id=38A)
IRF150 SEME-LAB

类似代替

N-CHANNEL POWER MOSFET
NTE2392 NTE

功能相似

MOSFET N-Channel Enhancement Mode, High Speed Switch

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