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IRF1503L PDF预览

IRF1503L

更新时间: 2024-02-20 21:00:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
11页 660K
描述
HEXFET Power MOSFET

IRF1503L 数据手册

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PD - 94494A  
IRF1503S  
IRF1503L  
HEXFET® Power MOSFET  
Typical Applications  
14V Automotive Electrical Systems  
14V Electronic Power Steering  
D
VDSS = 30V  
Benefits  
Advanced Process Technology  
Ultra Low On-Resistance  
175°COperatingTemperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
RDS(on) = 3.3mΩ  
G
ID = 75A  
S
Description  
Specifically designed for Automotive applications, this Stripe Planar  
design of HEXFET® Power MOSFETs utilizes the lastest processing  
techniques to achieve extremely low on-resistance per silicon area.  
Additional features of this HEXFET power MOSFET are a 175°C  
junction operating temperature, fast switching speed and improved  
repetitive avalanche rating. These benefits combine to make this  
design an extremely efficient and reliable device for use in Automotive  
applications and a wide variety of other applications.  
D2Pak  
IRF1503S  
TO-262  
IRF1503L  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon limited)  
Continuous Drain Current, VGS @ 10V (See Fig.9)  
Continuous Drain Current, VGS @ 10V (Package limited)  
Pulsed Drain Current   
190  
130  
75  
A
960  
200  
1.3  
PD @TC = 25°C  
Power Dissipation  
W
Linear Derating Factor  
W/°C  
VGS  
Gate-to-Source Voltage  
20  
V
EAS  
Single Pulse Avalanche Energy‚  
Single Pulse Avalanche Energy Tested Value†  
Avalanche Current  
510  
980  
mJ  
EAS (tested)  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energyꢀ  
Operating Junction and  
mJ  
°C  
TJ  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting Torque, 6-32 or M3 screw  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
Typ.  
–––  
0.50  
–––  
Max.  
0.75  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
°C/W  
www.irf.com  
1
12/11/02  

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