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IRF1503STRLPBF PDF预览

IRF1503STRLPBF

更新时间: 2024-11-04 13:02:19
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
9页 552K
描述
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

IRF1503STRLPBF 数据手册

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PD-94526A  
AUTOMOTIVE MOSFET  
IRF1503  
HEXFET® Power MOSFET  
Typical Applications  
14V Automotive Electrical Systems  
14V Electronic Power Steering  
D
VDSS = 30V  
Features  
Advanced Process Technology  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
RDS(on) = 3.3mΩ  
G
ID = 75A  
S
Description  
Specifically designed for Automotive applications, this  
design of HEXFET® Power MOSFETs utilizes the lastest  
processing techniques to achieve extremely low on-  
resistance per silicon area. Additional features of this  
HEXFET power MOSFET are a 175°C junction operating  
temperature,fastswitchingspeedandimprovedrepetitive  
avalanche rating. These combine to make this design an  
extremelyefficientandreliabledeviceforuseinAutomotive  
applications and a wide variety of other applications.  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
240  
170  
75  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon limited)  
Continuous Drain Current, VGS @ 10V (See Fig.9)  
Continuous Drain Current, VGS @ 10V (Package limited)  
Pulsed Drain Current   
A
960  
330  
2.2  
PD @TC = 25°C  
Power Dissipation  
W
W/°C  
V
Linear Derating Factor  
VGS  
Gate-to-Source Voltage  
20  
EAS  
Single Pulse Avalanche Energy‚  
Single Pulse Avalanche Energy Tested Value†  
Avalanche Current  
510  
980  
mJ  
EAS (tested)  
IAR  
See Fig.12a, 12b, 15, 16  
A
EAR  
Repetitive Avalanche Energyꢀ  
Operating Junction and  
mJ  
TJ  
-55 to + 175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
Typ.  
–––  
0.50  
–––  
Max.  
0.45  
–––  
62  
Units  
RθJC  
RθCS  
RθJA  
°C/W  
www.irf.com  
1
12/11/02  

IRF1503STRLPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF1503SPBF INFINEON

类似代替

HEXFET Power MOSFET
IRF1503S INFINEON

功能相似

HEXFET Power MOSFET

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