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IRF1503STRLPBF

更新时间： 2024-02-28 06:22:54

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
9页	552K
描述
Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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替代型号

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IRF1503STRLPBF 数据手册

PD-94526A

AUTOMOTIVE MOSFET

IRF1503

HEXFET^®Power MOSFET

Typical Applications

●

14V Automotive Electrical Systems

14V Electronic Power Steering

●

V_DSS= 30V

Features

●

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

R_DS(on)= 3.3mΩ

I_D= 75A

Description

Specifically designed for Automotive applications, this

design of HEXFET^®Power MOSFETs utilizes the lastest

processing techniques to achieve extremely low on-

resistance per silicon area. Additional features of this

HEXFET power MOSFET are a 175°C junction operating

temperature,fastswitchingspeedandimprovedrepetitive

avalanche rating. These combine to make this design an

extremelyefficientandreliabledeviceforuseinAutomotive

applications and a wide variety of other applications.

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

240

170

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Silicon limited)

Continuous Drain Current, V_GS@ 10V (See Fig.9)

Continuous Drain Current, V_GS@ 10V (Package limited)

Pulsed Drain Current

960

330

2.2

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

V_GS

Gate-to-Source Voltage

E_AS

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

510

980

E_AS(tested)

I_AR

See Fig.12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energyꢀ

Operating Junction and

T_J

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Case-to-Sink, Flat, Greased Surface

Junction-to-Ambient

Typ.

–––

0.50

–––

Max.

0.45

–––

Units

R_θJC

R_θCS

R_θJA

°C/W

www.irf.com

12/11/02

12 3 4 5 6 7...9

中文翻译

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IRF1503STRLPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRF1503SPBF	INFINEON	类似代替	HEXFET Power MOSFET
IRF1503S	INFINEON	功能相似	HEXFET Power MOSFET

与IRF1503STRLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRF1503STRR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Me
IRF1503STRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Me
IRF150CF	NJSEMI	获取价格	Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) TO-3
IRF150CHP	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRF150EAPBF	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
IRF150EB	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
IRF150EBPBF	INFINEON	获取价格	38A, 100V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150EC	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Me
IRF150ECPBF	INFINEON	获取价格	38A, 100V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
IRF150ED	INFINEON	获取价格	Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Me

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