Datasheet > JANTX2N6760

JANTX2N6760

更新时间： 2024-09-27 22:57:27

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
6页	205K
描述
POWER MOSFET N-CHANNEL(BVdss=400V, Rds(on)=1.00ohm, Id=5.5A)

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Provisional Data Sheet No. PD-9.335E

JANTX2N6760

JANTXV2N6760

[REF:MIL-PRF-19500/542]

HEXFET^®POWER MOSFET

[GENERIC:IRF330]

N-CHANNEL

400 Volt, 1.00Ω HEXFET

Product Summary

Part Number

JANTX2N6760

JANTXV2N6760

BVDSS

RDS(on)

HEXFETtechnology is the key to International Rectifier’s

advanced line of power MOSFET transistors.The effi-

cient geometry achieves very low on-state resistance

combined with high transconductance.

400V

5.5A

1.00Ω

HEXFET transistors also feature all of the well-establish

advantages of MOSFETs, such as voltage control, very

fast switching, ease of paralleling and electrical param-

eter temperature stability. They are well-suited for appli-

cations such as switching power supplies, motor controls,

inverters, choppers, audio amplifiers, and high energy

pulse circuits, and virtually any application where high

reliability is required.

Features:

■ Avalanche Energy Rating

■ Dynamic dv/dt Rating

■ Simple Drive Requirements

■ Ease of Paralleling

■ Hermetically Sealed

Absolute Maximum Ratings

Parameter

JANTX2N6760, JANTXV2N6760 Units

@ V

= 10V, T = 25°C Continuous Drain Current

5.5

@ V

= 10V, T = 100°C Continuous Drain Current

3.5

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single PulseAvalanche Energy ➁

Avalanche Current➀

@ T = 25°C

W/K ➄

0.60

±20

1.7

5.5

RepetitiveAvalanche Energy➀

Peak Diode Recovery dv/dt ➂

Operating Junction

—

dv/dt

4.0

V/ns

-55 to 150

^oC

STG

StorageTemperature Range

Lead Temperature

(0.063 in. (1.6mm) from

300

case for 10.5 seconds)

11.5 (typical)

Weight

To Order

12 3 4 5 6

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