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JANTX2N6756

更新时间: 2024-02-11 19:33:59
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英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
6页 207K
描述
POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14A)

JANTX2N6756 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.333E  
JANTX2N6756  
JANTXV2N6756  
[REF:MIL-PRF-19500/542]  
HEXFET® POWER MOSFET  
[GENERIC:IRF130]  
N-CHANNEL  
100 Volt, 0.18HEXFET  
Product Summary  
Part Number  
JANTX2N6756  
JANTXV2N6756  
BVDSS  
RDS(on)  
ID  
HEXFET technology is the key to International  
Rectifier’s advanced line of power MOSFET transis-  
tors. The efficient geometry achieves very low on-  
state resistance combined with high transconductance.  
100V  
14A  
0.18Ω  
HEXFET transistors also feature all of the well-es-  
tablish advantages of MOSFETs, such as voltage  
control, very fast switching, ease of paralleling and  
electrical parameter temperature stability. They are  
well-suited for applications such as switching power  
supplies, motor controls, inverters, choppers, audio  
amplifiers, and high energy pulse circuits, and virtu-  
ally any application where high reliability is required.  
Features:  
Avalanche Energy Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Absolute Maximum Ratings  
Parameter  
JANTX2N6756, JANTXV2N6756 Units  
I
D
@ V  
= 10V, T = 25°C Continuous Drain Current  
14  
GS  
C
A
I
@ V  
= 10V, T = 100°C Continuous Drain Current  
9
56  
D
GS  
C
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
75  
W
W/K ➄  
V
D
C
0.60  
±20  
75  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
GS  
E
mJ  
AS  
AR  
I
14  
A
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
7.5  
mJ  
AR  
dv/dt  
5.5  
V/ns  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
Lead Temperature  
STG  
(0.063 in. (1.6mm) from  
300  
case for 10.5 seconds)  
11.5 (typical)  
Weight  
To Order  
 
 

JANTX2N6756 替代型号

型号 品牌 替代类型 描述 数据表
JANTXV2N6756 INFINEON

完全替代

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)
IRF130 INFINEON

类似代替

TRANSISTORS N-CHANNEL(Vdss=100V, Rds(on)=0.18ohm, Id=14A)

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