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JANTX2N6660 PDF预览

JANTX2N6660

更新时间: 2024-02-28 10:38:40
品牌 Logo 应用领域
威世 - VISHAY 开关晶体管
页数 文件大小 规格书
6页 125K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

JANTX2N6660 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.7其他特性:LOW THRESHOLD
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):0.99 A最大漏源导通电阻:3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):10 pF
JEDEC-95代码:TO-205ADJESD-30 代码:O-MBCY-W3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:METAL
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
参考标准:MIL表面贴装:NO
端子形式:WIRE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

JANTX2N6660 数据手册

 浏览型号JANTX2N6660的Datasheet PDF文件第2页浏览型号JANTX2N6660的Datasheet PDF文件第3页浏览型号JANTX2N6660的Datasheet PDF文件第4页浏览型号JANTX2N6660的Datasheet PDF文件第5页浏览型号JANTX2N6660的Datasheet PDF文件第6页 
2N6660, 2N6660-2, 2N6660JANTX, 2N6660JANTXV  
www.vishay.com  
Vishay Siliconix  
N-Channel 60 V (D-S) MOSFET  
FEATURES  
• Military Qualified  
PRODUCT SUMMARY  
VDS (V)  
60  
• Low On-Resistence: 1.3  
• Low Threshold: 1.7 V  
• Low Input Capacitance: 35 pF  
RDS(on) () at VGS = 10 V  
3
Configuration  
Single  
• Fast Switching Speed: 8 ns  
• Low Input and Output Leakage  
TO-205AD  
(TO-39)  
BENEFITS  
• Guaranteed Reliability  
• Low Offset Voltage  
• Low-Voltage Operation  
• Easily Driven Without Buffer  
• High-Speed Circuits  
• Low Error Voltage  
S
1
2
3
APPLICATIONS  
• Hi-Rel Systems  
G
D
• Direct Logic-Level Interface: TTL/CMOS  
Top View  
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays,  
Memories, Transistors, etc.  
• Battery Operated Systems  
• Solid-State Relays  
ORDERING INFORMATION  
DESCRIPTION/DSCC  
PART NUMBER  
VISHAY ORDERING  
PART NUMBER  
PART  
PACKAGE  
Commercial  
2N6660  
2N6660  
Commercial, Lead (Pb)-free  
2N6660-E3  
www.vishay.com/doc?67884  
See -2 Flow Document  
2N6660-2  
2N6660-2  
JANTX2N6660 (std Au leads)  
JANTX2N6660 (with solder)  
JANTX2N6660P (with PIND)  
JANTXV2N6660 (std Au leads)  
JANTXV2N6660P (with PIND)  
2N6660JTX02  
2N6660JTXL02  
2N6660JTXP02  
2N6660JTXV02  
2N6660JTVP02  
TO-205AD  
(TO-39)  
2N6660JANTX  
2N6660JANTXV  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
60  
20  
UNIT  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
T
C = 25 °C  
0.99  
0.62  
Continuous Drain Current (TJ = 150 °C)  
ID  
TC = 100 °C  
A
Pulsed Drain Currenta  
IDM  
PD  
3
TC = 25 °C  
TA = 25 °C  
6.25  
Maximum Power Dissipation  
W
0.725  
170  
Thermal Resistance, Junction-to-Ambientb  
Thermal Resistance, Junction-to-Case  
RthJA  
RthJC  
°C/W  
°C  
20  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
Notes  
a. Pulse width limited by maximum junction temperature.  
b. Not required by military spec.  
S11-1542-Rev. D, 01-Aug-11  
Document Number: 70223  
1
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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