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JANTX2N6338 PDF预览

JANTX2N6338

更新时间： 2024-11-04 00:00:03
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其他 - ETC 晶体晶体管
页数 文件大小 规格书
17页 85K
描述
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 25A I(C) | TO-3

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JANTX2N6338 数据手册

 浏览型号JANTX2N6338的Datasheet PDF文件第2页浏览型号JANTX2N6338的Datasheet PDF文件第3页浏览型号JANTX2N6338的Datasheet PDF文件第4页浏览型号JANTX2N6338的Datasheet PDF文件第5页浏览型号JANTX2N6338的Datasheet PDF文件第6页浏览型号JANTX2N6338的Datasheet PDF文件第7页 
The documentation and process conversion  
measures necessary to comply with this revision  
shall be completed by 25 October 1999.  
INCH-POUND  
MIL-PRF-19500/509C  
25 July 1999  
SUPERSEDING  
MIL-S-19500/509B  
25 June 1993  
PERFORMANCE SPECIFICATION SHEET  
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER  
TYPES 2N6338 AND 2N6341  
JAN, JANTX, JANTXV AND JANS  
This specification is approved for use by all Depart-  
ments and Agencies of the Department of Defense.  
1. SCOPE  
1.1 Scope. This specification covers the performance requirements for NPN, silicon power transistors. Four levels of product  
assurance are provided for each device type as specified in MIL-PRF-19500.  
1.2 Physical dimensions. See Figure 1, (similar to TO – 204AA formally TO - 3).  
1.3 Maximum ratings.  
Types  
P
T
1/ 2/  
P
T
V
CBO  
V
CEO  
V
EBO  
I
C
I
B
T
and T  
OP  
STG  
T
= +25°C  
T
= +100°C  
C
A
W
W
V dc  
V dc  
V dc  
A dc  
A dc  
°C  
2N6338  
2N6341  
200  
200  
112  
112  
120  
180  
100  
150  
6.0  
6.0  
25  
25  
10  
10  
-65 to +200  
-65 to +200  
1/ Between T = +25°C and T = +200°C, linear derating factor (average) = 1.14 W/°C.  
C
C
2/ Maintain voltage and current according to the safe operating area shown in figure 4.  
1.4 Primary electrical characteristics at T = 25°C.  
A
Limit  
h
FE1  
1/  
V
V
C
(
BE(SAT)  
CE SAT)  
obo  
1 MHz £ f £ 1 MHz  
= 10 V dc  
I
= 25 A dc  
I
= 10 A dc  
I
= 10 A dc  
= 1.0 V dc  
I
= 25 A dc  
I = 2.5 A dc  
B
I
= 10 A dc  
= 1.0 A dc  
C
C
C
C
C
V
CB  
V
CE  
= 2.0 V dc  
V
CE  
= 2.0 V dc  
I
B
I
B
I
E
= 0  
V dc  
V dc  
V dc  
pF  
Min  
Max  
12  
---  
30  
120  
---  
1.8  
---  
1.8  
---  
1.0  
---  
450  
1/ Pulsed, (see 4.5.1).  
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document  
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH  
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this  
document or by letter.  
AMSC N/A  
FSC 5961  
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.  
1234567...17

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与JANTX2N6338相关器件

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JANTX2N6339 MICROSEMI

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 		Power Bipolar Transistor, 25A I(C), 120V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
JANTX2N6340 MICROSEMI

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 		Power Bipolar Transistor, 25A I(C), 140V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL
JANTX2N6341 ETC

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 		TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 25A I(C) | TO-3
JANTX2N6350 MICROSEMI

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 		NPN DARLINGTON POWER SILICON TRANSISTOR
JANTX2N6351 MICROSEMI

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 		NPN DARLINGTON POWER SILICON TRANSISTOR
JANTX2N6352 MICROSEMI

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 		NPN DARLINGTON POWER SILICON TRANSISTOR
JANTX2N6353 MICROSEMI

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 		NPN DARLINGTON POWER SILICON TRANSISTOR
JANTX2N6378 ETC

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 		TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50A I(C) | TO-3
JANTX2N6379 MICROSEMI

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 		Power Bipolar Transistor, 50A I(C), 120V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
JANTX2N6383 ETC

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 		TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 10A I(C) | TO-3

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