Datasheet > IXTT96N20P

IXTT96N20P

更新时间： 2024-11-05 11:08:11

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	605K
描述
N-Channel Engancement Mode

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中文翻译

获取价格

数据手册
替代型号

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IXTT96N20P 数据手册

IXTH 96N20P

IXTQ 96N20P

IXTT 96N20P

V_DSS

I_D25

= 200 V

= 96 A

PolarHT^TM

Power MOSFET

R_DS(on)= 24 mΩ

N-Channel Enhancement Mode

TO-247 (IXTH)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

200

V_GSM

(TAB)

I_D25

T_C= 25°C

I_D(RMS)

I_DM

External lead current limit

T_C= 25°C, pulse width limited by T_JM

TO-3P(IXTQ)

225

I_AR

T_C= 25°C

E_AR

E_AS

T_C= 25°C

1.5

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 4 Ω

V/ns

(TAB)

T_C= 25°C

600

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +150

°C

TO-268 (IXTT)

T_L

1.6 mm (0.062 in.) from case for 10 s

300

°C

M_d

Mounting torque

(TO-3P, TO-247)

1.13/10 Nm/lb.in.

D (TAB)

Weight

TO-3P

TO-247

TO-268

5.5

6.0

5.0

G = Gate

S = Source

D = Drain

TAB = Drain

Features

Symbol

TestConditions

Characteristic Values

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250µA

V_GS= 20 V_DC, V_DS= 0

200

2.5

5.0

100

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

µA

T_J= 150°C

Easy to mount

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

24 mΩ

High power density

DS99117D(01/05)

12 3 4 5

中文翻译

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IXTT96N20P 替代型号

型号	品牌	替代类型	描述	数据表
IXFH96N20P	IXYS	功能相似	PolarHT HiPerFET Power MOSFET
IXTQ96N20P	IXYS	功能相似	N-Channel Engancement Mode
IXTH96N20P	IXYS	功能相似	N-Channel Engancement Mode

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