是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 1500 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 200 A |
最大漏极电流 (ID): | 200 A | 最大漏源导通电阻: | 0.0055 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 550 W | 最大脉冲漏极电流 (IDM): | 500 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IXTV200N10TS | IXYS | Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, |
获取价格 |
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IXTV22N50P | LITTELFUSE | Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Met |
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IXTV22N50PS | IXYS | Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Met |
获取价格 |
|
IXTV22N60P | IXYS | PolarHVTM Power MOSFET N-Channel Enhancement Mode |
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|
IXTV22N60PS | IXYS | PolarHVTM Power MOSFET N-Channel Enhancement Mode |
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|
IXTV230N085T | IXYS | Power Field-Effect Transistor, 230A I(D), 85V, 0.0044ohm, 1-Element, N-Channel, Silicon, M |
获取价格 |