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IXTV22N50P PDF预览

IXTV22N50P

更新时间: 2024-11-06 10:36:19
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 196K
描述
Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220, 3 PIN

IXTV22N50P 数据手册

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PolarTM  
Power MOSFETs  
N-Channel Enhancement Mode  
Avalanche Rated  
VDSS = 500V  
ID25 = 22A  
RDS(on) 270mΩ  
trr(typ) = 400ns  
IXTV22N50P  
IXTV22N50PS  
IXTQ22N50P  
IXTH22N50P  
Fast Intrinsic Diode  
PLUS220 (IXTV)  
TO-3P (IXTQ)  
PLUS220SMD (IXTV_S)  
G
D
G
D
S
G
S
S
D (TAB)  
D (TAB)  
D (TAB)  
TO-247 (IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
500  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
D (TAB)  
ID25  
IDM  
TC = 25°C  
22  
50  
A
A
TC = 25°C, Pulse Width Limited by TJM  
G = Gate  
D
= Drain  
S = Source TAB = Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
22  
750  
A
mJ  
dV/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
350  
V/ns  
W
Features  
z International Standard Packages  
z Avalanche Rated  
TJ  
-55 ... +150  
150  
°C  
TJM  
Tstg  
°C  
z Fast Intrinsic Diode  
z Low Package Inductance  
-55 ... +150  
°C  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Advantages  
z High Power Density  
z Easy to Mount  
Md  
Mounting Torque (TO-247 & TO-3P)  
Mounting Force (PLUS220)  
1.13/10  
Nm/lb.in.  
N/lb.  
FC  
11..65/2.5..14.6  
z Space Savings  
Weight  
PLUS220 types  
TO-3P  
TO-247  
4.0  
5.5  
6.0  
g
g
g
Applications  
z Switched-Mode and Resonant-Mode  
Power Supplies  
Symbol  
Test Conditions  
Characteristic Values  
z DC-DC Converters  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
z Laser Drivers  
z AC and DC Motor Drives  
z Robotics and Servo Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS= 0V  
V
V
5.5  
± 100 nA  
μA  
IDSS  
5
TJ = 125°C  
50 μA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
270 mΩ  
DS99351G(07/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

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