Datasheet > IXTV96N25T

IXTV96N25T

更新时间： 2024-02-16 09:31:16

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
6页	172K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTV96N25T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXTV96N25T 数据手册

Preliminary Technical Information

TrenchHV^TM

Power MOSFET

IXTH96N25T

IXTQ96N25T

IXTV96N25T

V_DSS= 250V

I_D25= 96A

R_DS(on)≤ 29mΩ

N-Channel Enhancement Mode

Avalanche Rated

TO-247 (IXTH)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

250

(TAB)

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

250

V_GSM

Transient

± 30

TO-3P (IXTQ)

I_D25

I_LRMS

I_DM

T_C= 25°C

Lead Current Limit, RMS

T_C= 25°C, pulse width limited by T_JM

250

I_AS

T_C= 25°C

E_AS

(TAB)

P_D

T_C= 25°C

625

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

PLUS220 (IXTV)

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10 seconds

300

260

°C

M_d

Mounting torque (TO-247 & TO-3P)

Mounting force (PLUS220)

1.13 / 10

Nm/lb.in.

N/lb.

(TAB)

F_C

11..65 / 2.5..14.6

G = Gate

S = Source

D = Drain

TAB = Drain

Weight

TO-247

TO-3P

PLUS220

6.0

5.5

4.0

Features

^zInternational standard packages

^zAvalanche rated

^zLow package inductance

- easy to drive and to protect

Symbol

Test Conditions

Characteristic Values

Advantages

(T_J= 25°C unless otherwise specified)

Min.

250

Typ.

Max.

Easy to mount

Space savings

High power density

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 1mA

V_GS= ± 20V, V_DS= 0V

± 200 nA

μA

Applications

I_DSS

V_DS= V_DSS

V_GS= 0V

T_J= 125°C

250 μA

^zDC-DC converters

^zBattery chargers

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Notes 1, 2

29 mΩ

^zSwitched-mode and resonant-mode

power supplies

^zDC choppers

^zAC motor control

^zUninterruptible power supplies

DS99863(09/07)

12 3 4 5 6

中文翻译

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