Datasheet > IXTX170P10P

IXTX170P10P

更新时间： 2024-01-31 15:35:58

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	146K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTX170P10P 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.75
Base Number Matches：	1

IXTX170P10P 数据手册

PolarP^TM

Power MOSFET

V_DSS= -100V

I_D25= -170A

R_DS(on) 14m

IXTK170P10P

IXTX170P10P

P-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXTK)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150C

T_J= 25C to 150C, R_GS= 1M

-100

V_DGR

Tab

V_GSS

V_GSM

Continuous

Transient

20

30

PLUS247 (IXTX)

I_D25

T_C= 25C (Chip Capability)

-170

I_LRMS

I_DM

Lead Current Limit, RMS

T_C= 25C, Pulse Width Limited by T_JM

-160

- 510

I_A

T_C= 25C

-170

3.5

Tab

E_AS

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150C

T_C= 25C

V/ns

G = Gate

S = Source

= Drain

Tab = Drain

890

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features

^International Standard Packages

^Rugged PolarP^TMProcess

^High Current Handling Capability

^Fast Intrinsic Diode

M_d

Mounting Force

Mounting Forque

(PLUS247)

(TO-264)

20..120 / 4.5..27

1.13 / 10

N/lb.

Nm/lb.in.

Weight

PLUS247

TO-264

^Avalanche Rated

^Low Package Inductance

Advantages

Symbol

Test Conditions

Characteristic Values



Easy to Mount

Space Savings

High Power Density

(T_J= 25C, Unless Otherwise Specified)

Min.

-100

- 2.0

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250A

V_DS= V_GS, I_D= -1mA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

- 4.0

Applications

100 nA



High-Side Switches

Push Pull Amplifiers

DC Choppers

Automatic Test Equipment



I_DSS

- 50 A

- 250 A



T_J= 125C



R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

14 m



Current Regulators

DS99974C(5/17)

12 3 4 5 6

中文翻译

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