Datasheet > IXTX200N10L2

IXTX200N10L2

更新时间： 2024-11-21 14:56:31

品牌	Logo	应用领域
力特 - LITTELFUSE		开关
页数	文件大小	规格书
6页	161K
描述
这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用，具有低热阻、高功率密度和正向偏压安全工作区(RBSOA)。当功率MOSFET以线性模式工作时，相对于传统的开关模式具有相当高的热应

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数据手册

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IXTX200N10L2 数据手册

Advance Technical Information

Linear L2^TMPower

MOSFET w/ Extended

FBSOA

V_DSS

I_D25

= 100V

= 200A

IXTK200N10L2

IXTX200N10L2

R_DS(on)< 11mΩ

N-Channel Enhancement Mode

Guaranteed FBSOA

Avalanche Rated

TO-264 (IXTK)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

100

Tab

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

±20

±30

PLUS247(IXTX)

I_D25

I_LRMS

I_DM

T_C= 25°C (Chip Capability)

200

160

500

Lead Current Limit, (RMS)

T_C= 25°C, Pulse Width Limited by T_JM

I_A

E_AS

T_C= 25°C

100

Tab

P_D

T_C= 25°C

1040

T_J

-55...+150

150

°C

G = Gate

S = Source

= Drain

T_JM

T_stg

Tab = Drain

-55...+150

T_L

1.6mm (0.063 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

T_SOLD

Features

M_d

F_C

Mounting Torque (IXTK)

Mounting Force (IXTX)

1.13/10

Nm/lb.in.

N/lb.

^zDesigned for Linear Operation

^zAvalanche Rated

^zGuaranteed FBSOA at 75°C

20..120 / 4.5..27

Weight

TO-264

PLUS247

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 3mA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

100

^zSolid State Circuit Breakers

^zSoft Start Controls

^zLinear Amplifiers

^zProgrammable Loads

^zCurrent Regulators

2.0

4.5

±200 nA

I_DSS

10 μA

250 μA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

11 mΩ

DS100239(2/10)

12 3 4 5 6

中文翻译

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