Datasheet > IXTX20N150

IXTX20N150

更新时间： 2024-11-20 21:10:03

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	145K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTX20N150 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	1.74
Base Number Matches：	1

IXTX20N150 数据手册

High Voltage Power

MOSFETs w/ Extended

FBSOA

V_DSS

I_D25

R_DS(on)< 1Ω

= 1500V

= 20A

IXTK20N150

IXTX20N150

N-Channel Enhancement Mode

Avalanche Rated

Guaranteed FBSOA

TO-264 (IXTK)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

1500

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

±30

±40

Tab

I_D25

I_DM

T_C= 25°C

PLUS247 (IXTX)

T_C= 25°C, Pulse Width Limited by T_JM

I_A

T_C= 25°C

2.5

E_AS

dv/dt

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

V/ns

Tab

P_D

T_C= 25°C

1250

T_J

-55 to +150

150

°C

G = Gate

S = Source

= Drain

Tab = Drain

T_JM

T_stg

-55 to +150

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

Features

M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in.

N/lb.

20..120 /4.5..27

Avalanche Rated

Weight

TO-264

PLUS247

Fast Intrinsic Diode

Guaranteed FBSOA at 75°C

Low Package Inductance

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, Unless Otherwise Specified)

Advantages

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 1mA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

1500

2.5

Easy to Mount

Space Savings

4.5

±200 nA

I_DSS

50 µA

Applications

T_J= 125°C

750 µA

High Voltage Power Supplies

Capacitor Discharge

Pulse Circuits

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

Ω

DS100424B(11/12)

12 3 4 5 6

中文翻译

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