Datasheet > IXTX1R4N450HV

IXTX1R4N450HV

更新时间： 2024-11-27 20:06:39

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	185K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTX1R4N450HV 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.38
Base Number Matches：	1

IXTX1R4N450HV 数据手册

Advance Technical Information

High Voltage

Power MOSFET

V_DSS

I_D25

= 4500V

= 1.4A

IXTX1R4N450HV

R_DS(on) 40

N-Channel Enhancement Mode

TO-247PLUS-HV

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

4500

D (Tab)

V_DGR

V_GSS

V_GSM

Continuous

Transient

20

30

G = Gate

S = Source

= Drain

Tab = Drain

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

1.4

5.0

P_D

T_C= 25C

960

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

C

Features



High Blocking Voltage

High Voltage Package

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



M_d

Mounting Force

20..120 / 4.5..27

Nm/lb.in

Advantages

Weight



Easy to Mount

Space Savings



High Power Density

Applications



High Voltage Power Supplies

Capacitor Discharge Applications

Pulse Circuits

Laser and X-Ray Generation Systems

Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

Typ. Max.

6.0

100 nA

A



V_GS(th)

I_GSS

V_DS= V_GS, I_D= 250A

V_GS= 20V, V_DS= 0V

4.0

I_DSS

V_DS= 3.6kV, V_GS= 0V

V_DS= 4.5kV

25 μA

V_DS= 3.6kV

T_J= 125C

μA

R_DS(on)

V_GS= 10V, I_D= 50mA, Note 1



DS100711(03/16)

12 3 4 5 6

中文翻译

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