Datasheet > IXTX102N65X2

IXTX102N65X2

更新时间： 2024-11-06 14:56:15

品牌	Logo	应用领域
力特 - LITTELFUSE		栅二极管栅极
页数	文件大小	规格书
6页	239K
描述
这些新型器件采用电荷补偿原理和专有工艺技术开发，具有最低的导通电阻，以及低栅极电荷和卓越的dv/dt性能。其雪崩能力也增强了器件的强度。此外，借助快速软恢复体二极管，超级结MOSFET有助于

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数据手册

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IXTX102N65X2 数据手册

X2-Class

Power MOSFET

V_DSS= 650V

I_D25= 102A

R_DS(on) 30m

IXTK102N65X2

IXTX102N65X2

N-Channel Enhancement Mode

Avalanche Rated

TO-264P (IXTK)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

650

Tab

V_GSS

V_GSM

Continuous

Transient

 30

 40

PLUS247 (IXTX)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

102

204

I_A

E_AS

T_C= 25C

Tab

P_D

T_C= 25C

1040

dv/dt

I_S I_DM, V_DD V_DSS, T_J 150°C

V/ns

G = Gate

S = Source

= Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

Tab = Drain

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C



International Standard Packages

Low Q_G

Avalanche Rated



M_d

F_C

Mounting Torque (TO-264P)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in

N/lb

20..120 /4.5..27

Low Package Inductance

Weight

TO-264P

PLUS247

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values



(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250μA

V_GS=  30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

650

Applications

3.0

5.0



Switch-Mode and Resonant-Mode

100 nA

Power Supplies



DC-DC Converters

PFC Circuits

AC and DC Motor Drives

Robotics and Servo Controls

I_DSS

25 A

350 A



T_J= 125C



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

30 m

DS100655B(4/18)

12 3 4 5 6

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