品牌 | Logo | 应用领域 |
力特 - LITTELFUSE | / | |
页数 | 文件大小 | 规格书 |
7页 | 229K | |
描述 | ||
Power Field-Effect Transistor, |
生命周期: | Transferred | 包装说明: | PLASTIC, PLUS247, 3 PIN |
针数: | 3 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 8.54 |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 3000 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 200 V | 最大漏极电流 (Abs) (ID): | 120 A |
最大漏极电流 (ID): | 120 A | 最大漏源导通电阻: | 0.03 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 1040 W | 最大脉冲漏极电流 (IDM): | 400 A |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTX170P10P | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTX17N120L | IXYS |
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Power Field-Effect Transistor, 17A I(D), 1200V, 0.9ohm, 1-Element, N-Channel, Silicon, Met | |
IXTX1R4N450HV | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTX200N10L2 | IXYS |
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Linear L2 Power MOSFET w/ Extended FBSOA | |
IXTX200N10L2 | LITTELFUSE |
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IXTX20N150 | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTX20N150 | IXYS |
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Power Field-Effect Transistor, 20A I(D), 1500V, 1ohm, 1-Element, N-Channel, Silicon, Metal | |
IXTX210P10T | LITTELFUSE |
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Power Field-Effect Transistor, | |
IXTX22N100L | IXYS |
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Power Field-Effect Transistor, 22A I(D), 1000V, 0.6ohm, 1-Element, N-Channel, Silicon, Met | |
IXTX22N100L | LITTELFUSE |
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Power Field-Effect Transistor, |