是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.83 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 1000 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (ID): | 18 A |
最大漏源导通电阻: | 0.42 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 54 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IXTQ18N60P | IXYS |
完全替代 |
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated | |
IXTV18N60P | IXYS |
完全替代 |
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated | |
IXFV18N60PS | IXYS |
类似代替 |
PolarHV HiPerFET Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTV200N10T | IXYS |
获取价格 |
Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, | |
IXTV200N10TS | IXYS |
获取价格 |
Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, | |
IXTV22N50P | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Met | |
IXTV22N50PS | IXYS |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Met | |
IXTV22N60P | IXYS |
获取价格 |
PolarHVTM Power MOSFET N-Channel Enhancement Mode | |
IXTV22N60PS | IXYS |
获取价格 |
PolarHVTM Power MOSFET N-Channel Enhancement Mode | |
IXTV230N085T | IXYS |
获取价格 |
Power Field-Effect Transistor, 230A I(D), 85V, 0.0044ohm, 1-Element, N-Channel, Silicon, M | |
IXTV230N085TS | IXYS |
获取价格 |
MOSFET N-CH 85V 230A PLUS220SMD | |
IXTV250N075T | IXYS |
获取价格 |
Power Field-Effect Transistor, 250A I(D), 75V, 0.004ohm, 1-Element, N-Channel, Silicon, Me | |
IXTV250N075TS | IXYS |
获取价格 |
Power Field-Effect Transistor, 250A I(D), 75V, 0.004ohm, 1-Element, N-Channel, Silicon, Me |