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IXTV18N60PS PDF预览

IXTV18N60PS

更新时间: 2024-11-05 12:02:23
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 176K
描述
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated

IXTV18N60PS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
风险等级:5.83Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):1000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):18 A
最大漏源导通电阻:0.42 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):54 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTV18N60PS 数据手册

 浏览型号IXTV18N60PS的Datasheet PDF文件第2页浏览型号IXTV18N60PS的Datasheet PDF文件第3页浏览型号IXTV18N60PS的Datasheet PDF文件第4页浏览型号IXTV18N60PS的Datasheet PDF文件第5页 
PolarHVTM  
Power MOSFET  
IXTQ 18N60P  
IXTV 18N60P  
IXTV 18N60PS  
VDSS = 600 V  
ID25 = 18 A  
RDS(on) 420 mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
Symbol  
Test Conditions  
Maximum Ratings  
TO-3P (IXTQ)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
600  
600  
V
TJ = 25°C to 150°C; RGS = 1 MΩ  
V
VGS  
Continuous  
Tranisent  
30  
40  
V
V
G
VGSM  
D (TAB)  
D
S
ID25  
IDM  
TC = 25°C  
18  
54  
A
A
TC = 25°C, pulse width limited by TJM  
PLUS220 (IXTV)  
IAR  
TC = 25°C  
18  
A
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
1.0  
G
D (TAB)  
D
S
dv/dt  
PD  
IS IDM, di/dt 100 A/μs, VDD VDSS  
TJ 150°C, RG = 5 Ω  
,
10  
V/ns  
TC = 25°C  
360  
W
PLUS220SMD (IXTV...S)  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
G
S
D (TAB)  
Md  
Mounting torque  
TO-3P  
(TO-3P)  
1.13/10 Nm/lb.in.  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Weight  
6
4
g
g
PLUS220 & PLUS220SMD  
Features  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
z International standard packages  
z Unclamped Inductive Switching (UIS)  
rated  
z Low package inductance  
- easy to drive and to protect  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 μA  
VDS = VGS, ID = 250μA  
VGS = 30 V, VDS = 0  
600  
V
V
3.0  
5.5  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
μA  
μA  
Advantages  
TJ = 125°C  
z
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 μs, duty cycle d 2 %  
420 mΩ  
Easy to mount  
Space savings  
High power density  
z
z
DS99324E(03/06)  
© 2006 IXYS All rights reserved  

IXTV18N60PS 替代型号

型号 品牌 替代类型 描述 数据表
IXTQ18N60P IXYS

完全替代

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
IXTV18N60P IXYS

完全替代

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated
IXFV18N60PS IXYS

类似代替

PolarHV HiPerFET Power MOSFET

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