Datasheet > IXTU12N06T

IXTU12N06T

更新时间： 2024-11-05 21:03:55

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
6页	164K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTU12N06T 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.76
Base Number Matches：	1

IXTU12N06T 数据手册

Preliminary Technical Information

TrenchMV^TM

Power MOSFET

V_DSS= 60V

I_D25= 12A

R_DS(on)≤ 85mΩ

IXTU12N06T

IXTY12N06T

N-Channel Enhancement Mode

Avalanche Rated

TO-251 (IXTU)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

D (TAB)

TO-252 (IXTY)

V_GSM

Transient

±20

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

Package Current Limit, RMS TO-252

I_LRMS

I_AR

T_C= 25°C

E_AS

D (TAB)

P_D

T_C= 25°C

G = Gate

S = Source

D = Drain

TAB = Drain

T_J

-55 ... +175

175

°C

T_JM

T_stg

-55 ... +175

Features

T_L

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10s

300

260

°C

T_SOLD

^zUltra-low On Resistance

^zUnclamped Inductive Switching (UIS)

rated

^zLow package inductance

- easy to drive and to protect

^z175 °C Operating Temperature

M_d

Mounting torque

1.13/10

Nm/lb.in.

Weight

TO-251

TO-252

0.40

0.35

Advantages

Easy to mount

Space savings

High power density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min.

Typ. Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 25μA

V_GS= ± 20V, V_DS= 0V

Applications

2.0

4.0

Automotive

± 50 nA

μA

100 μA

- Motor Drives

- 42V Power Bus

I_DSS

V_DS= V_DSS

V_GS= 0V

- ABS Systems

T_J= 150°C

DC/DC Converters and Off-line UPS

Primary Switch for 24V and 48V

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Notes 1, 2

85 mΩ

Systems

High Current Switching

Applications

DS99947(4/08)

12 3 4 5 6

中文翻译

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与IXTU12N06T相关器件

型号	品牌	获取价格	描述	数据表
IXTU1N80P	LITTELFUSE	获取价格	Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-
IXTU1N80P	IXYS	获取价格	Power Field-Effect Transistor, 1A I(D), 800V, 14ohm, 1-Element, N-Channel, Silicon, Metal-
IXTU1R4N60P	IXYS	获取价格	Power Field-Effect Transistor, 1.4A I(D), 600V, 9ohm, 1-Element, N-Channel, Silicon, Metal
IXTU2N80P	IXYS	获取价格	Power Field-Effect Transistor, 2A I(D), 800V, 6ohm, 1-Element, N-Channel, Silicon, Metal-o
IXTU4N60P	LITTELFUSE	获取价格	Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-o
IXTU4N70X2	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTU5N50P	IXYS	获取价格	Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal
IXTU8N70X2	LITTELFUSE	获取价格	这些新型器件采用电荷补偿原理和专有工艺技术开发，具有最低的导通电阻，以及低栅极电荷和卓越的
IXTV02N250S	IXYS	获取价格	Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Me
IXTV102N20T	IXYS	获取价格	Power Field-Effect Transistor, 102A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, M

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