Datasheet > IXTU01N100D

IXTU01N100D

更新时间： 2024-09-27 03:13:39

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	93K
描述
N-Channel, Depletion Mode High Voltage MOSFET

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中文翻译

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数据手册
替代型号

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IXTU01N100D 数据手册

IXTP 01N100D

IXTU 01N100D

IXTY 01N100D

V_DSS= 1000 V

I_D25= 100 mA

R_DS(on)= 110 Ω

High Voltage MOSFET

N-Channel,DepletionMode

PreliminaryDataSheet

Symbol

TestConditions

Maximum Ratings

TO-220 (IXTP)

V_DSX

V_DGX

T_J= 25°C to 150°C

1000

V_GS

Continuous

Transient

± 20

± 30

D (TAB)

V_GSM

I_DSS

I_DM

T_C= 25°C; T_J= 25°C to 150°C

100

400

T_C= 25°C, pulse width limited by T_J

TO-251 (IXTU)

P_D

T_C= 25°C

T_A= 25°C

1.1

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

D (TAB)

T_L

1.6 mm (0.063 in.) from case for 10 s

Plastic case for 10 s (IXTU)

300

°C

T_ISOL

M_d

TO-252 (IXTY)

Mounting torque

TO-220

1.3 / 10 Nm/lb.

Weight

TO-220

TO-251

TO-252

0.8

D (TAB)

Pins: 1 - Gate

2 - Drain

3 - Source TAB - Drain

Symbol

TestConditions

Characteristic Values

min. typ. max.

Features

(T_J= 25°C, unless otherwise specified)

^zNormally ON mode

V_DSX

V_GS(off)

V_GS= -10 V, I_D= 25 μA

V_DS= 25V, I_D= 25 μA

1000

-2.5

^zLow R_{DS (on)}HDMOS^TMprocess

^zRuggedpolysilicongatecellstructure

^zFastswitchingspeed

-5

I_GSS

V_GS= ± 20 V_DC, V_DS= 0

±100 nA

I_DSX(off)

V_DS= V_DSX,V_GS= -10 V

10 μA

Applications

T_J= 125°C

Note 1

250 μA

Level shifting

R_DS(on)

I_D(on)

V_GS= 0 V, I_D= 50 mA

V_GS= 0 V, V_DS= 25V

110

Triggers

Solid state relays

Note 1

100

Currentregulators

98809B (01/06)

中文翻译

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IXTU01N100D 替代型号

型号	品牌	替代类型	描述	数据表
IXTY01N100D	IXYS	功能相似	N-Channel, Depletion Mode High Voltage MOSFET
IXTP01N100D	IXYS	功能相似	High Voltage MOSFET

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