品牌 | Logo | 应用领域 |
力特 - LITTELFUSE | / | |
页数 | 文件大小 | 规格书 |
7页 | 383K | |
描述 | ||
Power Field-Effect Transistor, |
生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.39 |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTU5N50P | IXYS |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal | |
IXTU8N70X2 | LITTELFUSE |
获取价格 |
这些新型器件采用电荷补偿原理和专有工艺技术开发,具有最低的导通电阻,以及低栅极电荷和卓越的 | |
IXTV02N250S | IXYS |
获取价格 |
Power Field-Effect Transistor, 0.2A I(D), 2500V, 450ohm, 1-Element, N-Channel, Silicon, Me | |
IXTV102N20T | IXYS |
获取价格 |
Power Field-Effect Transistor, 102A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, M | |
IXTV110N25TS | IXYS |
获取价格 |
TrenchTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated | |
IXTV18N60P | IXYS |
获取价格 |
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated | |
IXTV18N60PS | IXYS |
获取价格 |
PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated | |
IXTV200N10T | IXYS |
获取价格 |
Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, | |
IXTV200N10TS | IXYS |
获取价格 |
Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, | |
IXTV22N50P | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Met |