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IXTN62N50L PDF预览

IXTN62N50L

更新时间: 2024-11-18 12:31:19
品牌 Logo 应用领域
IXYS 晶体二极管晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 136K
描述
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

IXTN62N50L 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred包装说明:FLANGE MOUNT, R-PUFM-X4
针数:4Reach Compliance Code:compliant
风险等级:5.71Is Samacsys:N
其他特性:UL RECOGNIZED雪崩能效等级(Eas):5000 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):62 A
最大漏极电流 (ID):62 A最大漏源导通电阻:0.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PUFM-X4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):800 W
最大脉冲漏极电流 (IDM):150 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Nickel (Ni)端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXTN62N50L 数据手册

 浏览型号IXTN62N50L的Datasheet PDF文件第2页浏览型号IXTN62N50L的Datasheet PDF文件第3页浏览型号IXTN62N50L的Datasheet PDF文件第4页浏览型号IXTN62N50L的Datasheet PDF文件第5页 
LinearTM Power MOSFET  
w/Extended FBSOA  
VDSS = 500V  
ID25 = 62A  
RDS(on) 100mΩ  
IXTN62N50L  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
miniBLOC  
E153432  
S
G
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
500  
V
V
V
V
S
VDGR  
VGSS  
VGSM  
TJ = 25°C to 150°C, RGS = 1MΩ  
Continuous  
500  
± 30  
± 40  
D
Transient  
G = Gate  
D = Drain  
S = Source  
ID25  
IDM  
TC = 25°C  
62  
A
A
TC = 25°C, Pulse Width Limited by TJM  
150  
Either Source Terminal S can be used as  
the Source Terminal or the Kelvin Source  
(Gate Return) Terminal.  
IA  
TC = 25°C  
TC = 25°C  
TC = 25°C  
80  
5
A
J
EAS  
PD  
TJ  
800  
W
°C  
°C  
°C  
Features  
-55 ... +150  
150  
z
International Standard Package  
Low Intrinsic Gate Resistance  
miniBLOC with Aluminum Nitride  
TJM  
Tstg  
z
-55 ... +150  
z
Isolation  
Fast Intrinsic Diode  
Extended FBSOA  
Avalanche Rated  
Low RDS(ON) and QG  
Low Package Inductance  
VISOL  
50/60 Hz, RMS, t = 1minute  
2500  
3000  
V~  
V~  
z
IISOL 1mA,  
t = 1s  
z
z
Md  
Mounting Torque for Base Plate  
Terminal Connection Torque  
1.5/13  
1.3/11.5  
Nm/lb.in.  
Nm/lb.in.  
z
z
Weight  
30  
g
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ. Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
V
V
z
Programmable Loads  
DC-DC Converters  
Current Regulators  
Battery Chargers  
DC Choppers  
Temperature and Lighting  
VDS = VGS, ID = 250μA  
VGS = ± 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
5.5  
z
z
± 200 nA  
50 μA  
z
z
IDSS  
z
TJ = 125°C  
1
mA  
Controls  
RDS(on)  
VGS = 20V, ID = 0.5 • ID25, Note 1  
100 mΩ  
DS99812A(11/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  

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