Datasheet > IXTN8N150L

IXTN8N150L

更新时间： 2024-11-18 14:51:43

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
6页	152K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXTN8N150L 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Is Samacsys：	N	Base Number Matches：	1

IXTN8N150L 数据手册

Linear Power MOSFET

w/Extended FBSOA

V_DSS

I_D25

R_DS(on)≤ 3.6Ω

= 1500V

= 7.5A

IXTN8N150L

N-Channel Enhancement Mode

Guaranteed FBSOA

miniBLOC, SOT-227 B

E153432

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

1500

V_DGR

T_J= 25°C to 150°C, R_GS= 1MΩ

V_GSS

V_GSM

Continuous

Transient

±30

±40

I_D25

I_DM

T_C= 25°C

7.5

G = Gate

S = Source

D = Drain

S = Source

T_C= 25°C, Pulse Width Limited by T_JM

P_D

T_C= 25°C

545

T_J

-55 to +150

150

°C

Features

T_JM

T_stg

-55 to +150

^zDesigned for Linear Operations

^zInternational Standard Package

^zMolding Epoxies Meet UL94 V-0

Flammability Classification

^zGuaranteed FBSOA at 60ºC

^zminiBLOC with Aluminum Nitride

Isolation

V_ISOL

50/60 Hz, RMS, t = 1minute

2500

3000

I_ISOL≤ 1mA,

t = 1s

M_d

Mounting Torque for Base Plate

Terminal Connection Torque

1.5/13

1.3/11.5

Nm/lb.in.

Weight

^zLow R_DS(on)HDMOS^TMProcess

^zRugged Polysilicon Gate Cell

Structure

^zLow Package Inductance

Applications

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, Unless Otherwise Specified)

^zProgrammable Loads

^zCurrent Regulators

^zDC-DC Convertors

^zBattery Chargers

^zDC Choppers

^zTemperature and Lighting Controls

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250µA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS,V_GS= 0V

1500

5.0

8.0

±200 nA

I_DSS

25 µA

T_J= 125°C

500 µA

R_DS(on)

V_GS= 20V, I_D= 4A, Note 1

3.6

Ω

Advantages

Easy to Mount

Space Savings

High Power Density

DS99815B(3/13)

12 3 4 5 6

中文翻译

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