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IXTP05N100M PDF预览

IXTP05N100M

更新时间: 2024-11-16 21:22:07
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 110K
描述
Power Field-Effect Transistor,

IXTP05N100M 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.69
Base Number Matches:1

IXTP05N100M 数据手册

 浏览型号IXTP05N100M的Datasheet PDF文件第2页浏览型号IXTP05N100M的Datasheet PDF文件第3页浏览型号IXTP05N100M的Datasheet PDF文件第4页浏览型号IXTP05N100M的Datasheet PDF文件第5页 
VDSS = 1000V  
ID25 = 700mA  
RDS(on) 17Ω  
High Voltage MOSFET  
IXTP05N100M  
(Electrically Isolated Tab)  
N-Channel Enhancement Mode  
Avalanche Rated  
OVERMOLDED TO-220  
(IXTP...M) OUTLINE  
Symbol  
Test Conditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1 MΩ  
1000  
1000  
V
V
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
Isolated Tab  
G
ID25  
IDM  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
700  
3
mA  
A
D
S
IA  
EAS  
TC = 25°C  
TC = 25°C  
1
100  
A
mJ  
G = Gate  
S = Source  
D = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ =150°C  
TC = 25°C  
3
V/ns  
W
25  
TJ  
TJM  
Tstg  
- 55 ... +150  
150  
- 55 ... +150  
°C  
°C  
°C  
Features  
Plastic overmolded tab for electrical  
isolation  
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
International standard package  
Avalanche rated  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
Low package inductance  
- easy to drive and to protect  
Weight  
2.5  
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Easy to mount  
Space savings  
High power density  
(TJ = 25°C, unless otherwise specified)  
BVDSS  
VGS(th)  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 25μA  
1000  
V
V
2.5  
4.5  
IGSS  
IDSS  
VGS = ±30V, VDS = 0V  
±100 nA  
VDS = VDSS  
VGS = 0V  
25 μA  
500 μA  
TJ = 125°C  
RDS(on)  
VGS = 10V, ID = 375mA, Note 1  
15  
17  
Ω
© 2008 IXYS CORPORATION, All rights reserved  
DS100014A(08/08)  

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