IXTP110N055P

更新时间： 2024-11-04 21:53:59

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	119K
描述
PolarHT Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IXTP110N055P 数据手册

PolarHT^TM

Power MOSFET

IXTQ 110N055P

IXTA 110N055P

IXTP 110N055P

V_DSS= 55 V

I_D25= 110 A

R_DS(on)= 13.5 mΩ

N-Channel Enhancement Mode

TO-3P(IXTQ)

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C; R_GS= 1 MΩ

(TAB)

V_GS

Continuous

Tranisent

TO-220 (IXTP)

V_GSM

I_D25

I_DRMS

I_DM

T_C= 25°C

External lead current limit

T_C= 25°C, pulse width limited by T_JM

110

250

(TAB)

I_AR

T_C= 25°C

110

E_AR

E_AS

T_C= 25°C

TO-263 (IXTA)

1.0

dv/dt

P_D

I_S≤ I_DM, di/dt ≤ 100 A/μs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 10 Ω

V/ns

T_C= 25°C

330

(TAB)

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +150

°C

G = Gate

D = Drain

S = Source

TAB = Drain

T_L

1.6 mm (0.062 in.) from case for 10 s

Maximum tab temperature for soldering

TO-263 package for 10s

300

260

°C

Features

^zInternational standard packages

^zUnclamped Inductive Switching (UIS)

rated

^zLow package inductance

- easy to drive and to protect

M_d

Mounting torque

(TO-3P / TO-220)

1.13/10 Nm/lb.in.

Weight

TO-3P

TO-220

TO-263

5.5

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

Advantages

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 μA

V_DS= V_GS, I_D= 250μA

V_GS= 20 V_DC, V_DS= 0

Easy to mount

Space savings

High power density

2.5

5.0

100

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

μA

T_J= 125°C

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

13.5 mΩ

Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %

DS99182A(05/05)

12 3 4 5

中文翻译

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IXTP110N055P 替代型号

型号	品牌	替代类型	描述	数据表
IXTQ110N055P	IXYS	类似代替	PolarHT Power MOSFET

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