Datasheet > IXTK33N50

IXTK33N50

更新时间： 2024-11-17 22:11:03

品牌	Logo	应用领域
IXYS		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
4页	88K
描述
High Current MegaMOSFET

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中文翻译

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数据手册

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IXTK33N50 数据手册

IXTK 33N50 V_DSS= 500 V

I_D(cont)= 33 A

High Current

MegaMOS^TMFET

R_DS(on)= 0.17 Ω

N-ChannelEnhancementMode

Preliminarydata

Symbol Test conditions

Maximumratings

TO-264AA

V_DSS

V_DGR

T_J= 25°C to 150°C

500

T_J= 25°C to 150°C; R_GS= 1.0 MΩ

V_GS

Continuous

Transient

±20

±30

V_GSM

D(TAB)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

132

G = Gate

S = Source

D = Drain

TAB = Drain

P_D

T_C= 25°C

416

-55 ... +150

150

°C

T_JM

-55 ... +150

stg

M^d

Mountingtorque

1.13/10 Nm/lb.in.

Weight

Maxleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Features

• Low R_{DS (on)}HDMOS^TMprocess

• Ruggedpolysilicongatecell

structure

• Internationalstandardpackage

• Fast switching times

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C unless otherwise specified)

Min.

Typ. Max.

Applications

V_DSS

V_GS= 0 V, I_D= 5 mA

500

2.0

• Motorcontrols

• DC choppers

• UninterruptablePowerSupplies

(UPS)

• Switch-modeandresonant-mode

BV_DSStemperaturecoefficient

0.087

%/K

V_GS(th)

V_DS= V_GS, I_D= 250 µA

4.0

V_GS(th)temperature coefficient

-0.25

%/K

I_GSS

I_DSS

V_GS= ±20 V DC, V_DS= 0

±100 nA

Advantages

V_DS= 0.8 V_DSS

V_GS= 0 V

T_J= 25°C

200 µA

• Easy to mount with one screw

(isolated mounting screw hole)

• Space savings

T_J= 125°C

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

0.17

Ω

• High power density

IXYS reserves the right to change limits, test conditions, and dimensions.

95513C (4/97)

1 - 4

12 3 4

中文翻译

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