Datasheet > IXTK3N250L

IXTK3N250L

更新时间： 2024-11-19 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		开关
页数	文件大小	规格书
6页	247K
描述
当功率MOSFET用于线性模式工作时，相对于传统的开关模式具有相当高的热应力和电应力，这是因为同时发生高漏极电压和电流；这些极端应力会造成普通设备出现故障。 IXYS Linear MOSFET旨

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IXTK3N250L 数据手册

Advance Technical Information

Linear^TMPower MOSFET

w/Extended FBSOA

V_DSS

I_D25

= 2500V

= 3A

IXTK3N250L

IXTX3N250L

R_DS(on)< 10

N-Channel Enhancement Mode

TO-264 (IXTK)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

2500

D (Tab)

V_DGR

V_GSS

V_GSM

Continuous

Transient

20

30

PLUS247 (IXTX)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

P_D

T_C= 25C

417

T_J

-55...+150

150



C

D (Tab)

= Drain

T_JM

T_stg

-55...+150

G = Gate

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

S = Source

Tab = Drain

M_d

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in

N/lb

F_C

20..120 /4.5..27

Features

Weight

TO-264

PLUS247

^Designed for Linear Operation

^International Standard Packages

^Guaranteed FBSOA at 75C

Advantages

 Easy to Mount

 Space Savings

 High Power Density

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25C, Unless Otherwise Specified)

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

2500

3.0

Applications

V_DS= V_GS, I_D= 1mA

V_GS= 20V, V_DS= 0V

V_DS= 0.8 • V_DSS, V_GS= 0V

5.0

^Solid State Circuit Breakers

^Soft Start Controls

200 nA

^Linear Amplifiers

I_DSS

50 A

2 mA

^Programmable Loads

^Current Regulators

T_J= 125C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1



DS100917B(1/19)

12 3 4 5 6

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