Datasheet > IXTK60N50L2

IXTK60N50L2

更新时间： 2024-04-18 10:34:11

品牌	Logo	应用领域
力特 - LITTELFUSE		局域网开关脉冲晶体管
页数	文件大小	规格书
6页	185K
描述
这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用，具有低热阻、高功率密度和正向偏压安全工作区(RBSOA)。当功率MOSFET以线性模式工作时，相对于传统的开关模式具有相当高的热应

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数据手册

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IXTK60N50L2 数据手册

LinearL2^TM

Power MOSFET

w/Extended FBSOA

V_DSS

I_D25

= 500V

= 60A

IXTK60N50L2

IXTX60N50L2

R_DS(on)< 100m

N-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXTK)

Tab

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

500

PLUS247 (IXTX)

V_DGR

V_GSS

V_GSM

Continuous

Transient

30

40

I_D25

I_DM

T_C= 25C

T_C= 25C, pulse width limited by T_JM

150

Tab

I_A

E_AS

T_C= 25C

G = Gate

= Drain

S = Source

Tab = Drain

P_D

T_C= 25C

960

T_J

-55...+150

150



C

T_JM

T_stg

-55...+150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

Features

M_d

F_C

Mounting torque (IXTK)

Mounting Force (IXTX)

1.13/10

Nm/lb.in

N/lb

^Designed for linear operation

^International standard packages

^Avalanche rated

^Guaranteed FBSOA at 75C

20..120 / 4.5..27

Weight

TO-264

PLUS247

Advantages

 Easy to mount

 Space savings

 High power density

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25C, unless otherwise specified)

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 250μA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

500

2.5

^Solid state circuit breakers

^Soft start controls

^Linear amplifiers

^Programmable loads

^Current regulators

4.5

200 nA

I_DSS

50  A

5 mA

T_J= 125C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

100 m

DS100087A(5/15)

12 3 4 5 6

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