Datasheet > IXTK600N04T2

IXTK600N04T2

更新时间： 2024-03-12 21:01:43

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	238K
描述
这些器件具有40V至170V的漏极 - 源极电压额定值，并可提供高达600安培的高电流性能（Tc=@25oC）。通过结合高电流额定值与紧凑的封装选择，这些尺寸更加小巧的器件能够控制更高的功率。

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数据手册

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IXTK600N04T2 数据手册

Advance Technical Information

TrenchT2^TMGigaMOS^TM

Power MOSFET

V_DSS= 40V

I_D25= 600A

R_DS(on)≤ 1.5mΩ

IXTK600N04T2

IXTX600N04T2

N-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXTK)

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

Tab

V_GSM

Transient

± 20

PLUS247 (IXTX)

I_D25

I_L(RMS)

I_DM

T_C= 25°C (Chip Capability)

External Lead Current Limit

T_C= 25°C, Pulse Width Limited by T_JM

600

160

1600

I_A

E_AS

T_C= 25°C

200

Tab

P_D

T_C= 25°C

1250

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

G = Gate

S = Source

= Drain

Tab = Drain

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

Features

^zInternational Standard Packages

^zHigh Current Handling Capability

^zFast Intrinsic Diode

M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in.

N/lb.

20..120 /4.5..27

Weight

TO-264

PLUS247

^zAvalanche Rated

Low R_DS(on)

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250µA

V_DS= V_GS, I_D= 250µA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

^zDC-DC Converters and Off-Line UPS

^zPrimary-Side Switch

^zHigh Speed Power Switching

Applications

1.5

3.5

± 200 nA

10 µA

I_DSS

T_J= 150°C

R_DS(on)

V_GS= 10V, I_D= 100A, Notes 1 & 2

1.5 mΩ

DS100209(11/09)

12 3 4 5 6 7

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