5秒后页面跳转
IXTK600N04T2 PDF预览

IXTK600N04T2

更新时间: 2024-11-19 14:56:19
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 238K
描述
这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能(Tc=@25oC)。 通过结合高电流额定值与紧凑的封装选择,这些尺寸更加小巧的器件能够控制更高的功率。

IXTK600N04T2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.75
Is Samacsys:NBase Number Matches:1

IXTK600N04T2 数据手册

 浏览型号IXTK600N04T2的Datasheet PDF文件第2页浏览型号IXTK600N04T2的Datasheet PDF文件第3页浏览型号IXTK600N04T2的Datasheet PDF文件第4页浏览型号IXTK600N04T2的Datasheet PDF文件第5页浏览型号IXTK600N04T2的Datasheet PDF文件第6页浏览型号IXTK600N04T2的Datasheet PDF文件第7页 
Advance Technical Information  
TrenchT2TM GigaMOSTM  
Power MOSFET  
VDSS = 40V  
ID25 = 600A  
RDS(on) 1.5mΩ  
IXTK600N04T2  
IXTX600N04T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXTK)  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
40  
40  
V
V
Tab  
D
S
VGSM  
Transient  
± 20  
V
PLUS247 (IXTX)  
ID25  
IL(RMS)  
IDM  
TC = 25°C (Chip Capability)  
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
600  
160  
1600  
A
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
200  
3
A
J
G
Tab  
D
PD  
TC = 25°C  
1250  
W
S
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Features  
z International Standard Packages  
z High Current Handling Capability  
z Fast Intrinsic Diode  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
20..120 /4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
z Avalanche Rated  
z
Low RDS(on)  
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250µA  
VDS = VGS, ID = 250µA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
40  
V
V
z DC-DC Converters and Off-Line UPS  
z Primary-Side Switch  
z High Speed Power Switching  
Applications  
1.5  
3.5  
± 200 nA  
10 µA  
IDSS  
TJ = 150°C  
1
mA  
RDS(on)  
VGS = 10V, ID = 100A, Notes 1 & 2  
1.5 mΩ  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100209(11/09)  

与IXTK600N04T2相关器件

型号 品牌 获取价格 描述 数据表
IXTK60N50L2 IXYS

获取价格

LinearL2 Power MOSFET w/Extended FBSOA
IXTK60N50L2 LITTELFUSE

获取价格

这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用,具有低热阻、高功率密度和正
IXTK62N25 IXYS

获取价格

High Current MegaMOSFET
IXTK74N20 IXYS

获取价格

High Current MegaMOSFET
IXTK75N30 LITTELFUSE

获取价格

Power Field-Effect Transistor, 75A I(D), 300V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
IXTK75N30 IXYS

获取价格

Power Field-Effect Transistor, 75A I(D), 300V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
IXTK80N25 IXYS

获取价格

High Current MegaMOSTM FET
IXTK80N30L2 LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXTK82N25P IXYS

获取价格

PolarHT Power MOSFET
IXTK82N25P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡