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IXTK82N25P PDF预览

IXTK82N25P

更新时间: 2024-11-04 22:11:03
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PolarHT Power MOSFET

IXTK82N25P 数据手册

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PolarHTTM  
Power MOSFET  
IXTQ 82N25P  
IXTT 82N25P  
IXTK 82N25P  
VDSS = 250 V  
ID25 = 82  
RDS(on) = 35 mΩ  
A
N-Channel Enhancement Mode  
Preliminary Data Sheet  
TO-264 (IXTK)  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
= 25°C to 150°C  
250  
250  
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ  
VGSM  
20  
V
G
D
(TAB)  
S
ID25  
ID(RMS)  
T
= 25°C  
82  
75  
A
A
ECxternal lead current limit  
TO-3P(IXTQ)  
IDM  
IAR  
TC = 25°C, pulse width limited by TJM  
250  
60  
A
A
TC = 25°C  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
40  
mJ  
J
1.0  
G
D
S
(TAB)  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 4 Ω  
,
10  
V/ns  
TO-268 (IXTT)  
TC = 25°C  
500  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
S
D (TAB)  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Md  
1.13/10 Nm/lb.in.  
Weight  
TO-3P  
TO-264  
TO-268  
5.5  
10  
5.0  
g
g
g
Features  
z
International standard packages  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
- easy to drive and to protect  
z
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
250  
V
V
Advantages  
2.5  
5.0  
z
Easy to mount  
100  
nA  
z
Space savings  
z
IDSS  
VDS = VDSS  
VGS = 0 V  
25  
250  
µA  
µA  
High power density  
TJ = 125°C  
PolarHTTM DMOStransistors  
utilize proprietary designs and  
process. US patent is pending.  
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
35 mΩ  
DS99121B(04/04)  
© 2004 IXYS All rights reserved  

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