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IXTK8N150L PDF预览

IXTK8N150L

更新时间: 2024-11-18 20:51:15
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
6页 149K
描述
Power Field-Effect Transistor,

IXTK8N150L 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.26
Base Number Matches:1

IXTK8N150L 数据手册

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Preliminary Technical Information  
Linear Power MOSFET  
w/Extended FBSOA  
VDSS  
ID25  
= 1500V  
= 8A  
IXTK8N150L  
IXTX8N150L  
RDS(on) < 3.6Ω  
N-Channel Enhancement Mode  
Guaranteed FBSOA  
TO-264(IXTK)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
1500  
1500  
V
V
VDGR  
TJ = 25°C to 150°C, RGS = 1MΩ  
G
S
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
±30  
±40  
V
V
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
8
A
A
PLUS247(IXTX)  
20  
PD  
TC = 25°C  
700  
W
TJ  
-55 to +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G
-55 to +150  
D
S
(TAB)  
Drain  
TL  
1.6mm (0.063 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
TSOLD  
G = Gate  
D
=
Md  
FC  
Mounting Torque (IXTK)  
Mounting Force (IXTX)  
1.13/10  
Nm/lb.in.  
N/lb.  
S = Source  
TAB = Drain  
20..120 / 4.5..27  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Features  
z Designed for Linear Operations  
z International Standard Packages  
z Guaranteed FBSOA at 60°C  
z Molding Epoxies Meet UL94 V-0  
Flammability Classification  
Symbol  
Test Conditions  
Characteristic Values  
Min. Typ. Max.  
Applications  
(TJ = 25°C, Unless Otherwise Specified)  
z Programmable Loads  
z Current Regulators  
z DC-DC Convertors  
z Battery Chargers  
BVDSS  
VGS(th)  
VGS = 0V, ID = 1mA  
1500  
5.0  
V
VDS = VGS, ID = 250μA  
8.0  
V
IGSS  
IDSS  
VGS = ±30V, VDS = 0V  
±200 nA  
z DC Choppers  
VDS = VDSS  
VGS = 0V  
50 μA  
3 mA  
z Temperature and Lighting Controls  
TJ = 125°C  
RDS(on)  
VGS = 20V, ID = 0.5 • ID25 , Note 1  
3.6  
Ω
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
z
DS99616A(2/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

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