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IXTK88N30P PDF预览

IXTK88N30P

更新时间: 2024-11-20 12:46:27
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描述
PolarHTTM Power MOSFET

IXTK88N30P 数据手册

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PolarHTTM  
Power MOSFET  
IXTH 88N30P  
IXTK 88N30P  
IXTQ 88N30P  
IXTT 88N30P  
VDSS  
ID25  
RDS(on)  
= 300 V  
= 88 A  
40 mΩ  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXTH)  
Symbol  
Test Conditions  
Maximum Ratings  
D (TAB)  
G
D
VDSS  
VDGR  
TJ = 25° C to 150° C  
300  
300  
V
V
S
TJ = 25° C to 150° C; RGS = 1 MΩ  
VGS  
Continuous  
Transient  
20  
30  
V
V
TO-264 (IXTK)  
VGSM  
ID25  
TC =25° C  
88  
75  
A
A
A
ID(RMS)  
IDM  
External lead current limit  
TC = 25° C, pulse width limited by TJM  
220  
G
D
IAR  
TC =25° C  
60  
A
S
EAR  
EAS  
TC =25° C  
TC =25° C  
60  
mJ  
J
D (TAB)  
2.0  
TO-3P (IXTQ)  
dv/dt  
PD  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150° C, RG = 4 Ω  
10  
V/ns  
TC =25° C  
600  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G
D
(TAB)  
S
TL  
TSOLD  
1.6 mm (0.062 in.) from case for 10 s  
Plastic body for 10 s  
300  
260  
°C  
°C  
TO-268 (IXTT)  
Md  
Mounting torque  
1.13/10 Nm/lb.in.  
Weight  
TO-247  
TO-264  
TO-3P & TO-268  
6.0  
10  
5.5  
g
g
g
G
S
D (TAB)  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25° C, unless otherwise specified)  
Min. Typ.  
Max.  
Features  
l
International standard package  
Unclamped Inductive Switching (UIS)  
rated  
BVDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 250µA  
VGS = 20 VDC, VDS = 0  
300  
V
V
l
2.5  
5.0  
l
Low package inductance  
- easy to drive and to protect  
100  
nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
100  
1
µA  
mA  
Advantages  
TJ = 125° C  
l
Easy to mount  
Space savings  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
40 mΩ  
l
High power density  
DS99129E(12/05)  
© 2006 IXYS All rights reserved  

IXTK88N30P 替代型号

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