Datasheet > IXTK88N30P

IXTK88N30P

更新时间： 2024-11-05 12:46:27

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	329K
描述
PolarHTTM Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IXTK88N30P 数据手册

PolarHT^TM

Power MOSFET

IXTH 88N30P

IXTK 88N30P

IXTQ 88N30P

IXTT 88N30P

V_DSS

I_D25

R_DS(on)

= 300 V

= 88 A

≤ 40 mΩ

N-Channel Enhancement Mode

Avalanche Rated

TO-247 (IXTH)

Symbol

Test Conditions

Maximum Ratings

D (TAB)

V_DSS

V_DGR

T_J= 25° C to 150° C

300

T_J= 25° C to 150° C; R_GS= 1 MΩ

V_GS

Continuous

Transient

TO-264 (IXTK)

V_GSM

I_D25

T_C=25° C

I_D(RMS)

I_DM

External lead current limit

T_C= 25° C, pulse width limited by T_JM

220

I_AR

T_C=25° C

E_AR

E_AS

T_C=25° C

D (TAB)

2.0

TO-3P (IXTQ)

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 4 Ω

V/ns

T_C=25° C

600

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

(TAB)

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

°C

TO-268 (IXTT)

M_d

Mounting torque

1.13/10 Nm/lb.in.

Weight

TO-247

TO-264

TO-3P & TO-268

6.0

5.5

D (TAB)

G = Gate

S = Source

D = Drain

TAB = Drain

Symbol

Test Conditions

Characteristic Values

(T_J= 25° C, unless otherwise specified)

Min. Typ.

Max.

Features

International standard package

Unclamped Inductive Switching (UIS)

rated

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250µA

V_GS= 20 V_DC, V_DS= 0

300

2.5

5.0

Low package inductance

- easy to drive and to protect

100

I_DSS

V_DS= V_DSS

V_GS= 0 V

100

µA

Advantages

T_J= 125° C

Easy to mount

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤300 µs, duty cycle d ≤ 2 %

40 mΩ

High power density

DS99129E(12/05)

12 3 4 5

中文翻译

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IXTK88N30P 替代型号

型号	品牌	替代类型	描述	数据表
IXFK88N30P	IXYS	类似代替	Polar HiPerFET Power MOSFET
IXFT88N30P	IXYS	类似代替	Polar HiPerFET Power MOSFET
IXFH88N30P	IXYS	功能相似	Polar HiPerFET Power MOSFET

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