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IXTK90P20P PDF预览

IXTK90P20P

更新时间: 2024-11-05 12:02:23
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
5页 130K
描述
PolarPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated

IXTK90P20P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-264AA
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:8.5其他特性:AVALANCHE RATED
雪崩能效等级(Eas):3500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):90 A最大漏极电流 (ID):90 A
最大漏源导通电阻:0.044 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):890 W最大脉冲漏极电流 (IDM):270 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXTK90P20P 数据手册

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PolarPTM  
Power MOSFETs  
VDSS = - 200V  
ID25 = - 90A  
IXTK90P20P  
IXTX90P20P  
RDS(on)  
44mΩ  
P-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXTK)  
G
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
- 200  
- 200  
V
V
Tab  
VDGR  
VGSS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXTX)  
ID25  
IDM  
TC = 25°C  
TC = 25°C, Pulse Width Limited by TJM  
- 90  
A
A
- 270  
IA  
EAS  
TC = 25°C  
TC = 25°C  
- 90  
3.5  
A
J
G
D
S
Tab  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
10  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
890  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
Mounting Force  
Mounting Torque  
(PLUS247)  
(TO-264)  
20..120 / 4.5..27  
N/lb.  
Nm/lb.in.  
Features  
1.13 / 10  
z International Standard Packages  
z Rugged PolarPTM Process  
z Avalanche Rated  
Weight  
PLUS247  
TO-264  
6
10  
g
g
z Fast Intrinsic Diode  
z Low Package Inductance  
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
- 200  
- 2.0  
Typ.  
Max.  
Easy to Mount  
Space Savings  
High Power Density  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = - 250μA  
VDS = VGS, ID = -1mA  
VGS = ±20V, VDS = 0V  
VDS = VDSS , VGS = 0V  
V
V
z
- 4.0  
±100 nA  
Applications  
IDSS  
- 50 μA  
- 250 μA  
z
High-Side Switches  
Push Pull Amplifiers  
DC Choppers  
Automatic Test Equipment  
TJ = 125°C  
z
z
RDS(on)  
VGS = -10V, ID = 0.5 • ID25, Note 1  
44 mΩ  
z
z
Current Regulators  
© 2013 IXYS CORPORATION, All Rights Reserved  
DS99933C(01/13)  

IXTK90P20P 替代型号

型号 品牌 替代类型 描述 数据表
IXTX90P20P IXYS

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