Datasheet > IXTK90N15

IXTK90N15

更新时间： 2024-11-17 23:59:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
2页	88K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 90A I(D) \| TO-264AA

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中文翻译

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数据手册

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IXTK90N15 数据手册

Advance Technical Information

IXTK 90N15

V_DSS= 150 V

I_D25= 90 A

R_DS(on)= 16 mΩ

High Current

MegaMOS^TMFET

N-Channel Enhancement Mode

Symbol

Testconditions

Maximum ratings

TO-264AA(IXTK)

V_DSS

V_DGR

T_J= 25°C to 150°C

150

T_J= 25°C to 150°C; R_GS= 1.0 MΩ

V_GS

Continuous

Transient

V_GSM

D (TAB)

I_D25

I_D(RMS)

I_DM

T_C= 25°C MOSFET chip capability

External leadcurrentlimit

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

360

I_AR

G =Gate

S =Source

D = Drain

Tab = Drain

E_AR

E_AS

T_C= 25°C

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

P_D

T_J

T_C= 25°C

390

-55 ... +150

°C

T_JM

T_stg

150

-55 ... +150

°C

Features

T_L

1.6 mm (0.063 in.) from case for 10 s

Mountingtorque

300

0.7/6

°C

Nm/lb.in.

• Low R_{DS (on)}HDMOS^TMprocess

• Ruggedpolysilicongatecellstructure

• Internationalstandardpackage

• Fastswitchingtimes

M_d

Weight

TO-264

Applications

Symbol Test Conditions

Characteristic Values

• Motorcontrols

(T_J= 25°C unless otherwise specified)

Min. Typ.

Max.

• DC choppers

• Switched-mode power supplies

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 1 mA

150

Advantages

V_DS= V_GS, I_D= 250 µA

V_GS= 20 V DC, V_DS= 0

100 nA

• Easy to mount with one screw

(isolatedmountingscrewhole)

• Space savings

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

50 µA

• High power density

R_DS(on)

V_GS= 10 V, I = 0.5 I_D25

16 mΩ

Pulse test, t ≤^D300 ms, duty cycle d ≤ 2%

98876 (01/02)

中文翻译

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