生命周期: | Active | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.75 |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IXTQ50N25T | IXYS |
类似代替 ![]() |
Trench Gate Power MOSFET N-Channel Enhancement Mode |
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IXTA50N25T | IXYS |
功能相似 ![]() |
Trench Gate Power MOSFET N-Channel Enhancement Mode |
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IXTP50N25T | IXYS |
功能相似 ![]() |
Trench Gate Power MOSFET N-Channel Enhancement Mode |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH50N30 | IXYS |
获取价格 |
Advance Technical Information High Current Power MOSFET |
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IXTH50N30L2 | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, |
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IXTH50P085 | IXYS |
获取价格 |
Standard Power MOSFET |
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IXTH50P10 | IXYS |
获取价格 |
Standard Power MOSFET |
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IXTH50P10 | LITTELFUSE |
获取价格 |
P通道标准功率MOSFET的额定电压范围为-100V至-600V,并采用业内流行的TO-2 |
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IXTH52N65X | LITTELFUSE |
获取价格 |
Power Field-Effect Transistor, |
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IXTH52N65X | IXYS |
获取价格 |
Power Field-Effect Transistor, |
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IXTH52P10P | IXYS |
获取价格 |
Power Field-Effect Transistor, 52A I(D), 100V, 0.05ohm, 1-Element, P-Channel, Silicon, Met |
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IXTH52P10P | LITTELFUSE |
获取价格 |
Polar? P通道MOSFET采用我们的Polar技术平台制造,相比传统产品将通态电阻( |
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IXTH58N25L2 | LITTELFUSE |
获取价格 |
这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用,具有低热阻、高功率密度和正 |
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