Datasheet > IXTH60N10

IXTH60N10

更新时间： 2024-11-18 12:31:19

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	525K
描述
N-Channel Enhancement Mode

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中文翻译

获取价格

数据手册

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IXTH60N10 数据手册

Advance Technical Information

HiPerFET^TM

PowerMOSFETs

IXTH 60N10

IXTT 60N10

V_DSS

I_D25

= 100 V

= 60 A

R_DS(on)= 20 mΩ

N-ChannelEnhancementMode

Symbol Testconditions

Maximum ratings

TO-247AD(IXTH)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1.0 MΩ

100

(TAB)

V_GS

Continuous

Transient

±20

±30

V_GSM

I_D25

I_D(RMS)

I_DM

= 25°C MOSFET chip capability

320

E^Cxternal lead current limit

TO-268 (IXTT) Case Style

= 25°C, pulse width limited by T_JM

I_AR

T^C_C= 25°C

E_AR

E_AS

= 25°C

T^C_C= 25°C

1.5

(TAB)

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

G = Gate

S = Source

D = Drain

TAB = Drain

P_D

T_J

T_C= 25°C

300

-55 ... +150

°C

T_JM

T_stg

150

-55 ... +150

°C

Features

International standard packages

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Fast intrinsic Rectifier

T_L

1.6 mm (0.063 in.) from case for 10 s

Mounting torque

300

1.13/10

°C

Nm/lb.in.

M_d

Weight

TO-264

Symbol

TestConditions

Characteristic Values

Advantages

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 250 µA

V_GS= 20 V_DC, V_DS= 0

100

Easy to mount

Space savings

High power density

2.0

4.0

100

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

250

µA

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

20 mΩ

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

DS99069(7/03)

中文翻译

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