Datasheet > IXTH75N10L2

IXTH75N10L2

更新时间： 2024-11-18 21:14:15

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	141K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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IXTH75N10L2 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.74
Base Number Matches：	1

IXTH75N10L2 数据手册

Advance Technical Information

LinearL2^TMPower

MOSFET w/extended

FBSOA

V_DSS= 100V

I_D25= 75A

R_DS(on)≤ 21mΩ

IXTH75N10L2

IXTT75N10L2

_OD

N-Channel Enhancement Mode

Guaranteed FBSOA

R_Gi

Avalanche Rated

TO-247 (IXTH)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

100

D (Tab)

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

TO-268 (IXTT)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

225

I_A

E_AS

T_C= 25°C

2.5

D (Tab)

P_D

T_C= 25°C

400

T_J

-55 to +150

°C

G = Gate

S = Source

= Drain

T_JM

T_stg

+150

Tab = Drain

-55 to +150

T_L

1.6mm (0.063in) from Case for 10s

Plastic Body for 10s

300

260

°C

T_SOLD

Features

M_d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

Weight

TO-247

TO-268

6.0

4.0

^zDesigned for Linear Operation

^zInternational Standard Packages

^zAvalanche Rated

^zIntegrated Gate Resistor for Easy

Paralleling

^zGuaranteed FBSOA at 75°C

Symbol

Test Conditions

Characteristic Values

Advantages

(T_J= 25°C, Unless Otherwise Specified)

Min.

100

2.5

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Easy to Mount

Space Savings

High Power Density

4.5

±100 nA

μA

I_DSS

Applications

T_J= 125°C

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

50 μA

21 mΩ

^zSolid State Circuit Breakers

^zSoft Start Controls

R_DS(on)

^zLinear Amplifiers

^zProgrammable Loads

^zCurrent Regulators

DS100200(9/09)

12 3 4 5 6

中文翻译

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