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IXTH90N20X3 PDF预览

IXTH90N20X3

更新时间: 2024-11-22 14:56:47
品牌 Logo 应用领域
力特 - LITTELFUSE 开关栅极
页数 文件大小 规格书
4页 279K
描述
超级结MOSFET采用电荷补偿原理和专有工艺技术开发,可提供出类拔萃的质量因数(导通电阻乘以栅极电荷),最大限度地降低传导和开关损耗。 该系列产品表现出业内最低的导通电阻。 凭借较低的反向恢复电荷

IXTH90N20X3 数据手册

 浏览型号IXTH90N20X3的Datasheet PDF文件第2页浏览型号IXTH90N20X3的Datasheet PDF文件第3页浏览型号IXTH90N20X3的Datasheet PDF文件第4页 
Advance Technical Information  
X3-Class  
VDSS = 200V  
ID25 = 90A  
RDS(on) 12m  
IXTP90N20X3  
IXTH90N20X3  
Power MOSFETTM  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-220  
(IXTP)  
G
D
S
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TO-247  
(IXTH)  
TJ = 25C to 175C  
200  
200  
V
V
VDGR  
TJ = 25C to 175C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
G
D
D (Tab)  
S
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
90  
A
A
220  
G = Gate  
S = Source  
D
= Drain  
Tab = Drain  
IA  
TC = 25C  
TC = 25C  
45  
1
A
J
EAS  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
390  
Features  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
International Standard Packages  
Low RDS(ON) and QG  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Avalanche Rated  
Low Package Inductance  
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in  
Advantages  
Weight  
TO-220  
TO-247  
3
6
g
g
High Power Density  
Easy to Mount  
Space Savings  
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Robotics and Servo Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250μA  
VDS = VGS, ID = 250μA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
200  
V
V
2.5  
4.5  
100 nA  
A  
IDSS  
5
TJ = 125C  
100 A  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
10  
12 m  
DS100867B(4/18)  
© 2018 IXYS CORPORATION, All Rights Reserved  

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