V
I
R
DSS
D25
DS(on)
IXTH 7P50
IXTH 8P50
-500V -7 A 1.5 Ω
-500V -8 A 1.2 Ω
Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
TestConditions
Maximum Ratings
TO-247 AD
VDSS
VDGR
TJ = 25°C to 150°C
-500
-500
V
TJ = 25°C to 150°C; RGS = 1 MΩ
V
VGS
Continuous
Transient
±20
±30
V
V
D (TAB)
VGSM
ID25
IDM
IAR
TC = 25°C
7P50
8P50
-7
-8
A
A
TC = 25°C, pulse width limited by TJ
TC = 25°C
7P50
8P50
-28
-32
A
A
G = Gate,
S = Source,
D=Drain,
TAB = Drain
7P50
8P50
-7
-8
A
A
EAR
PD
TC = 25°C
TC = 25°C
30
mJ
W
Features
180
• Internationalstandardpackage
TJ
-55 ... +150
150
°C
°C
°C
°C
JEDEC TO-247 AD
TJM
Tstg
TL
• Low RDS (on) HDMOSTM process
• Ruggedpolysilicongatecellstructure
-55 ... +150
300
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
• UnclampedInductiveSwitching(UIS)
Md
Mountingtorque
1.13/10 Nm/lb.in.
rated
Weight
6
g
• Lowpackageinductance(<5nH)
- easy to drive and to protect
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Applications
min. typ. max.
• Highsideswitching
• Push-pullamplifiers
• DC choppers
VDSS
VGS = 0 V, ID = -250 µA
BVDSS Temperature Coefficient
-500
-3.0
V
%/K
0.054
VGS(th)
VDS = VGS, ID = -250 µA
VGS(th) TemperatureCoefficient
-5.0
V
%/K
• Automatictestequipment
-0.122
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100
nA
Advantages
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
-200 µA
-1 mA
• Easy to mount with 1 screw
(isolatedmountingscrewhole)
RDS(on)
VGS = -10 V, ID = 0.5 ID25
7P50
8P50
1.5
1.2
0.6 %/K
Ω
Ω
• Space savings
• High power density
RDS(on) TemperatureCoefficient
© 2001 IXYS All rights reserved
94534E (6/01)