Datasheet > IXTH7P50

IXTH7P50

更新时间： 2024-11-17 22:11:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	77K
描述
Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXTH7P50 数据手册

DSS

D25

DS(on)

IXTH 7P50

IXTH 8P50

-500V -7 A 1.5 Ω

-500V -8 A 1.2 Ω

Standard Power MOSFET

P-Channel Enhancement Mode

Avalanche Rated

Symbol

TestConditions

Maximum Ratings

TO-247 AD

V_DSS

V_DGR

T_J= 25°C to 150°C

-500

T_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

Continuous

Transient

±20

±30

D (TAB)

V_GSM

I_D25

I_DM

I_AR

T_C= 25°C

7P50

8P50

-7

-8

T_C= 25°C, pulse width limited by T_J

T_C= 25°C

7P50

8P50

-28

-32

G = Gate,

S = Source,

D=Drain,

TAB = Drain

7P50

8P50

-7

-8

E_AR

P_D

T_C= 25°C

Features

180

• Internationalstandardpackage

T_J

-55 ... +150

150

°C

JEDEC TO-247 AD

T_JM

T_stg

T_L

• Low R_{DS (on)}HDMOS^TMprocess

• Ruggedpolysilicongatecellstructure

-55 ... +150

300

Maximumleadtemperatureforsoldering

1.6 mm (0.062 in.) from case for 10 s

• UnclampedInductiveSwitching(UIS)

M_d

Mountingtorque

1.13/10 Nm/lb.in.

rated

Weight

• Lowpackageinductance(<5nH)

- easy to drive and to protect

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Applications

min. typ. max.

• Highsideswitching

• Push-pullamplifiers

• DC choppers

V_DSS

V_GS= 0 V, I_D= -250 µA

BV_DSSTemperature Coefficient

-500

-3.0

%/K

0.054

V_GS(th)

V_DS= V_GS, I_D= -250 µA

V_GS(th)TemperatureCoefficient

-5.0

%/K

• Automatictestequipment

-0.122

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±100

Advantages

V_DS= 0.8 V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

-200 µA

-1 mA

• Easy to mount with 1 screw

(isolatedmountingscrewhole)

R_DS(on)

V_GS= -10 V, I_D= 0.5 I_D25

7P50

8P50

1.5

1.2

0.6 %/K

Ω

• Space savings

• High power density

R_DS(on)TemperatureCoefficient

94534E (6/01)

中文翻译

下载PDF

与IXTH7P50相关器件

型号	品牌	获取价格	描述	数据表
IXTH80N075L2	IXYS	获取价格	Power Field-Effect Transistor,
IXTH80N075L2	LITTELFUSE	获取价格	这些独特的器件专为需要功率MOSFET以在电流饱和区工作的应用，具有低热阻、高功率密度和正
IXTH80N20L	IXYS	获取价格	MOSFET N-CH 200V 80A TO-247
IXTH80N20L	LITTELFUSE	获取价格	当功率MOSFET用于线性模式工作时，相对于传统的开关模式具有相当高的热应力和电应力，这是
IXTH80N65X2	LITTELFUSE	获取价格	这些新型器件采用电荷补偿原理和专有工艺技术开发，具有最低的导通电阻，以及低栅极电荷和卓越的
IXTH86N25T	IXYS	获取价格	Power Field-Effect Transistor, 86A I(D), 250V, 0.037ohm, 1-Element, N-Channel, Silicon, Me
IXTH86N25T	LITTELFUSE	获取价格	Power Field-Effect Transistor,
IXTH88N15	IXYS	获取价格	High Current Power MOSFET
IXTH88N30P	IXYS	获取价格	PolarHT Power MOSFET
IXTH88N30P	LITTELFUSE	获取价格	Polar?标准功率MOSFET经过专门定制，可为设计人员提供在性能和成本之间取得最佳平衡