型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXTH96N20P | IXYS |
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N-Channel Engancement Mode | |
IXTH96N20P | LITTELFUSE |
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Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡 | |
IXTH96N25T | LITTELFUSE |
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沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低 | |
IXTH96P085T | IXYS |
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TrenchPTM Power MOSFETs P-Channel Enhancement Mode | |
IXTH96P085T | LITTELFUSE |
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Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱 | |
IXTH9N100 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTH9N95 | IXYS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
IXTI10N60P | IXYS |
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Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Met | |
IXTI12N50P | LITTELFUSE |
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Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta | |
IXTI12N50P | IXYS |
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Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta |