5秒后页面跳转
IXTH94N20X4 PDF预览

IXTH94N20X4

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE 栅极
页数 文件大小 规格书
6页 772K
描述
新型200V X4超级结MOSFET采用最新的超级结技术设计,适用于高效电源应用。 其采用TO-247和TO-268HV封装。 它们提供了较低的RDS(on),同时减少了栅极和输出电荷,从而允许在给定频率下进行更有效的切换。? 功能与特色: 应用: ?

IXTH94N20X4 数据手册

 浏览型号IXTH94N20X4的Datasheet PDF文件第2页浏览型号IXTH94N20X4的Datasheet PDF文件第3页浏览型号IXTH94N20X4的Datasheet PDF文件第4页浏览型号IXTH94N20X4的Datasheet PDF文件第5页浏览型号IXTH94N20X4的Datasheet PDF文件第6页 
X4-Class  
VDSS = 200V  
ID25 = 94A  
IXTH94N20X4  
Power MOSFETTM  
RDS(on) 10.6m  
D
S
N-Channel Enhancement Mode  
Avalanche Rated  
G
TO-247  
(IXTH)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25C to 175C  
200  
200  
V
V
D (Tab)  
VDGR  
TJ = 25C to 175C, RGS = 1M  
G = Gate  
S = Source  
D
= Drain  
VGSS  
VGSM  
Continuous  
Transient  
20  
30  
V
V
Tab = Drain  
ID25  
IDM  
TC = 25C  
94  
A
A
TC = 25C, Pulse Width Limited by TJM  
220  
Features  
IA  
TC = 25C  
TC = 25C  
47  
1
A
J
EAS  
International Standard Package  
Low RDS(ON) and QG  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
20  
V/ns  
W
Avalanche Rated  
360  
Low Package Inductance  
TJ  
-55 ... +175  
175  
C  
C  
C  
TJM  
Tstg  
Advantages  
-55 ... +175  
High Power Density  
Easy to Mount  
Space Savings  
TL  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10s  
300  
°C  
Md  
Mounting Torque  
1.13 / 10  
Nm/lb.in  
g
Weight  
6
Applications  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
PFC Circuits  
AC and DC Motor Drives  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Robotics and Servo Controls  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 250µA  
VDS = VGS, ID = 250µA  
VGS = 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
200  
V
V
2.5  
4.5  
100 nA  
IDSS  
20 A  
TJ = 150C  
500 µA  
RDS(on)  
VGS = 10V, ID = 0.5 ID25, Note 1  
10.6 m  
© 2022 Littelfuse, Inc.  
DS101011C(10/22)  

与IXTH94N20X4相关器件

型号 品牌 获取价格 描述 数据表
IXTH96N20P IXYS

获取价格

N-Channel Engancement Mode
IXTH96N20P LITTELFUSE

获取价格

Polar?标准功率MOSFET经过专门定制,可为设计人员提供在性能和成本之间取得最佳平衡
IXTH96N25T LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低
IXTH96P085T IXYS

获取价格

TrenchPTM Power MOSFETs P-Channel Enhancement Mode
IXTH96P085T LITTELFUSE

获取价格

Trench P通道MOSFET非常适合“高压侧”开关应用,这些应用可采用简单的接地参考驱
IXTH9N100 IXYS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTH9N95 IXYS

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IXTI10N60P IXYS

获取价格

Power Field-Effect Transistor, 10A I(D), 600V, 0.74ohm, 1-Element, N-Channel, Silicon, Met
IXTI12N50P LITTELFUSE

获取价格

Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta
IXTI12N50P IXYS

获取价格

Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Meta