Datasheet > IXTH80N20L

IXTH80N20L

更新时间： 2022-09-29 19:08:35

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
6页	128K
描述
MOSFET N-CH 200V 80A TO-247

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数据手册

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IXTH80N20L 数据手册

Advance Technical Information

Linear^TM

Power MOSFET

w/ Extended FBSOA

V_DSS= 200V

I_D25= 80A

R_DS(on)≤ 32mΩ

IXTT80N20L

IXTH80N20L

N-Channel Enhancement Mode

Guaranteed FBSOA

Avalanche Rated

TO-268 (IXTT)

D (Tab)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

200

TO-247 (IXTH)

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

D (Tab)

340

I_A

E_AS

T_C= 25°C

2.5

G = Gate

= Drain

S = Source

Tab = Drain

P_D

T_C= 25°C

520

T_J

-55 to +150

+150

°C

T_JM

T_stg

-55 to +150

Features

T_L

1.6mm (0.063in) from Case for 10s

Plastic Body for 10s

300

260

°C

^zDesigned for Linear Operation

^zInternational Standard Packages

^zAvalanche Rated

T_SOLD

M_d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

^zGuaranteed FBSOA at 75°C

Weight

TO-268

TO-247

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

200

2.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 250μA

V_GS= ±20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

Applications

4.0

^zSolid State Circuit Breakers

^zSoft Start Controls

±100 nA

I_DSS

25 μA

^zLinear Amplifiers

^zProgrammable Loads

^zCurrent Regulators

T_J= 125°C

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

250 μA

R_DS(on)

32 mΩ

DS100294(11/10)

12 3 4 5 6

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